H5AN8G8NAFR-PBC vs H5ANAG8NBJR-PBC 对比
详细并排对比 H5AN8G8NAFR-PBC 出自 SK hynix 和 H5ANAG8NBJR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G8NAFR-PBC | H5ANAG8NBJR-PBC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | DRAM | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.20 | $31.50 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 16 Gbit (2 GB) |
| 存储组织 | 1G x 8 | x8 |
| 电源电压 | 1.2 V | — |
| 封装 | FBGA-78 | FBGA-78 (7.5 mm x 11 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Speed Grade / Data Rate | [DATA_NEEDED: speed grade / data rate] | PBC suffix, DDR4-2666 class |
| 接口 | DDR4 (double data rate, synchronized to clock) | — |
| Address Inputs | A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed) | — |
| Connectivity Test Mode | TEN (optional input on x4/x8, required on x16) | — |
| Process Technology | CMOS | — |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| RoHS 状态 | Compliant | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) |
| Datasheet Revision | Rev. 1.2 / July 2017 | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Supply Voltage (VDD) | — | 1.2 V |
| Bank Architecture | — | 16 banks in 4 bank groups (DDR4 standard) |
| Prefetch | — | 8n |
| 接口类型 | — | Parallel, SSTL12 |
| CAS Latency (typical bin) | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | Self refresh, 1x/2x/4x refresh modes |
| Die Revision | — | BJR |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |
| Standard Package Quantity | — | [DATA_NEEDED: standard quantity] |