H5AN8G8NCJR-PBC vs H5AN8G8NCJR-VKC 对比
详细并排对比 H5AN8G8NCJR-PBC 出自 SK hynix 和 H5AN8G8NCJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G8NCJR-PBC | H5AN8G8NCJR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.40 | $28.13 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM (volatile) |
| 存储容量 | 8 Gb (1 GB) | 8 Gbit |
| 存储组织 | 1G x 8 (x8) | — |
| Supply Voltage (VDD) | 1.2 V | 1.14 V to 1.26 V (1.2 V class) |
| Interface Voltage (VDDQ) | 1.2 V (SSTL12) | — |
| 数据速率 | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] | 2666 Mbps/pin |
| 封装 | 78-ball FBGA | FBGA-78 (78-ball fine-pitch BGA) |
| 安装类型 | Surface Mount | Surface Mount |
| Architecture | CMOS, fully synchronous, dual-edge clocked | — |
| Bank Structure | 8 internal banks, bank-group architecture | — |
| Burst Length | BL8 | — |
| 特性 | ODT, DM, DQS strobes, programmable CAS latency, self-refresh | — |
| Die Revision Family | CJR (H5AN8G8NCJR-xxC) | — |
| RoHS 状态 | Lead-Free & Halogen-Free | Compliant |
| 工作温度 | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Refresh | Auto-refresh and self-refresh | — |
| Typical Applications | PC/server main memory, embedded solder-down memory | — |
| Memory Organization | — | 1G x 8 |
| Clock Frequency | — | 1.6 GHz |
| Operating Current (typ) | — | 30 mA |
| Standby Current (typ) | — | 3 mA |
| 接口 | — | Parallel (DDR4) |
| Auto Self-Refresh | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Auto Precharge | — | Yes |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: refresh period] |