H5AN8G8NCJR-PBC - 8Gb DDR4 SDRAM, 1.2V | SK Hynix
料号： H5AN8G8NCJR-PBC ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $3.2 | $3.20 |
| 10 | $2.95 | $29.50 |
| 100 | $2.7 | $270.00 |
| 500 | $2.55 | $1,275.00 |
| 1,000 | $2.4 | $2,400.00 |
H5AN8G8NCJR-PBC 概述
DDR4 SDRAM is the fourth generation of double-data-rate synchronous DRAM, the dominant volatile main-memory technology in PCs, servers, workstations and embedded computing platforms. In the memory hierarchy it sits below CPU cache and above storage, providing the large working set that processors require. DDR4 improved on DDR3 with lower operating voltage (1.2 V versus 1.5 V), bank groups, a lower interface voltage (SSTL12), and higher pre-validated data rates.
Key features of the H5AN8G8NCJR family include fully synchronous operation latched on both clock edges, 8 internal banks with bank-group architecture, on-die termination (ODT), data mask (DM) support for write masking, programmable CAS latency, and DQS byte-lane strobes for source-synchronous data capture. The NCJR die revision is SK hynix's 8Gb-class DDR4 used widely in DIMM and solder-down memory designs.
The device uses a multi-bank CMOS core with address/command latching on every clock edge, burst lengths of BL8, and DLL-based output timing for the source-synchronous interface. Internal refresh and self-refresh modes support data retention across temperature ranges, while the FBGA-78 ball map is standardized across the DDR4 component ecosystem.
Typical applications include PC and workstation UDIMM/SODIMM main memory, server RDIMM modules, embedded x86 and ARM platforms with solder-down memory, networking equipment line-card memory, and industrial computing systems that require high density and bandwidth.
Designers must respect DDR4 PCB routing rules: matched fly-by address/command routing, per-byte-lane length matching for DQ/DQS, and controller-calibrated ZQ output impedance. JEDEC-standard SPD programming on module-based designs should reflect the PBC speed grade and die revision.
This page synthesizes distributor availability data, drop-in alternatives from the same package family, and practical design notes not found in the manufacturer datasheet.
直接替换替代料： H5AN8G8NCJR-PBC ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： H5AN8G8NCJR-PBC （相同外形与封装尺寸） ——差异在于 Package, Interface, Data Rate, Organization, Supply Voltage (VDD).
快速对比工具——选择替代料号进行并排对比：
H5AN8G8NAFR-PBC
✅ 直接替换✓ 有现货
$2.2 / 个
查看数据手册 →H5AN8G8NAFR-VKC
✅ 直接替换✓ 有现货
$4.15 / 个
查看数据手册 →H5AN8G8NAFR-UHC
✅ 直接替换✓ 有现货
联系询价
查看数据手册 →K4A8G165WC-BCRC
✅ 直接替换✓ 有现货
$23 / 个
查看数据手册 →MT40A1G8AG-062E
✅ 直接替换✓ 有现货
$3.1 / 个
查看数据手册 →H5AN8G8NCJR-PBC 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| 存储容量 | 8 Gb (1 GB) |
| 存储组织 | 1G x 8 (x8) |
| Supply Voltage (VDD) | 1.2 V |
| Interface Voltage (VDDQ) | 1.2 V (SSTL12) |
| 封装 | 78-ball FBGA |
| 安装类型 | Surface Mount |
| Architecture | CMOS, fully synchronous, dual-edge clocked |
| Bank Structure | 8 internal banks, bank-group architecture |
| Burst Length | BL8 |
| 特性 | ODT, DM, DQS strobes, programmable CAS latency, self-refresh |
| Die Revision Family | CJR (H5AN8G8NCJR-xxC) |
| RoHS 状态 | Lead-Free & Halogen-Free |
| Refresh | Auto-refresh and self-refresh |
| Typical Applications | PC/server main memory, embedded solder-down memory |
H5AN8G8NCJR-PBC 78-ball fbga 引脚配置指南
H5AN8G8NCJR-PBC（78-ball fbga 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： H5AN8G8NCJR-PBC.
请参阅 数据手册 以查看完整引脚配置。
典型应用
H5AN8G8NCJR-PBC 适用于 6 应用s: PC and Workstation Main Memory (UDIMM/SODIMM), Server Memory Modules (RDIMM/LRDIMM), Embedded x86 / ARM Solder-Down Memory, Networking and Telecom Line Cards, Consumer Electronics and Smart TV Platforms, Test, Measurement and Industrial Computing.
PC and Workstation Main Memory (UDIMM/SODIMM)
The H5AN8G8NCJR-PBC is a mainstream candidate for desktop and workstation memory modules, where 8Gb x8 DDR4 components populate UDIMMs and SODIMMs in singles or pairs to reach 8-32 GB capacities. Its 1.2 V operation keeps module power within JEDEC DDR4 budgets, and its CJR die revision is one of the most widely validated ICs in the consumer DIMM ecosystem, easing SPD compatibility across motherboard memory-training routines. On the module, the chip operates in fly-by address topology with on-die termination absorbing line reflections at data rates up to the PBC speed bin. Designers should program SPD bytes to match the exact speed grade so host controllers apply the correct CL-tRCD-TRP timings; mismatched SPD versus silicon is a common cause of training failure on first boot.
推荐
Server Memory Modules (RDIMM/LRDIMM)
Server RDIMMs register the address/command bus before it reaches the DRAM, and 8Gb x8 devices such as the H5AN8G8NCJR-PBC are the density workhorse of registered DDR4 modules for two-socket platforms. The part's bank-group architecture sustains the sequential and random access patterns typical of virtualization and database workloads, while 1.2 V VDDQ keeps per-module power within thermal limits of ECC RDIMM designs. Because servers commonly mix module vendors, the JEDEC-standard 78-ball FBGA footprint lets procurement substitute SK hynix, Samsung (K4A8G165WC series), or Micron (MT40A1G8 series) devices at the same speed bin. Memory-controller training and RCD compatibility must be re-verified for each die revision introduced into a qualified server BOM.
推荐
Embedded x86 / ARM Solder-Down Memory
In embedded computing - industrial PCs, edge servers, network appliances - the H5AN8G8NCJR-PBC is soldered directly on the baseboard rather than on a socketed module, saving height and improving vibration reliability. The 78-ball FBGA x8 footprint allows one to four devices to be bused to the host memory controller with fly-by C/A routing and per-byte-lane DQ/DQS matching. The CJR die's broad availability makes it a safe multi-year sourcing choice for long-lifecycle embedded programs, and the identical JEDEC footprint means H5AN8G8NAFR or cross-brand 8Gb x8 parts can be second-sourced without PCB respin. Firmware must implement memory training at every boot because solder-down DDR4 has no SPD EEPROM to store calibrated timings.
推荐
Networking and Telecom Line Cards
Switch, router, and 5G baseband line cards use x8 DDR4 components like the H5AN8G8NCJR-PBC as packet-buffer and table memory, where the 1.2 V supply reduces power per gigabit of buffering capacity - a direct contributor to the watts-per-port budget in high-density chassis. The BL8 burst and bank-group architecture match the long sequential bursts of packet DMA engines, and on-die termination simplifies multi-drop point-to-point routing on electrically long line cards. Telecom designs value the CJR die's large installed base for supply-chain resilience; cross-qualification with Samsung K4A8G165WC-BCRC provides a second source on the same footprint. Thermal design must account for continuous self-refresh-free operation at elevated card ambient temperatures.
推荐
Consumer Electronics and Smart TV Platforms
Set-top boxes, smart TVs, and gaming peripherals built on SoCs with DDR4 controllers use solder-down 8Gb x8 devices such as the H5AN8G8NCJR-PBC to provide 1 GB of unified memory for application processors and graphics. The 1.2 V core and SSTL12 interface meet the stringent standby power targets of consumer platforms, and the x8 organization reduces ball count per bit versus x16 in cost-sensitive designs. Because consumer SoCs support a limited set of validated speed bins, firmware should select the PBC timing set explicitly; a faster VKC-binned part can substitute but not vice versa. The identical 78-ball FBGA footprint shared with H5AN8G8NAFR parts allows die-revision transitions without PCB changes during the product's life cycle.
推荐
Test, Measurement and Industrial Computing
Bench instruments, machine-vision controllers, and industrial box PCs rely on DDR4 components like the H5AN8G8NCJR-PBC for frame buffers and working memory, where the 8Gb density allows single-device 1 GB configurations that simplify BOM and layout. The CJR die's proven reliability across wide ambient ranges suits industrial enclosures, and self-refresh mode supports rapid-resume designs that must retain context through short power interruptions. Industrial buyers benefit from the JEDEC-standard footprint: second-sourcing with Micron MT40A1G8AG-062E or SK hynix AFR-die parts avoids single-vendor allocation risk without a respin. Design teams should derate timing margins at elevated temperatures and confirm the datasheet refresh requirements across the qualified ambient range.
推荐
推荐产品汇总
工程参考数据： H5AN8G8NCJR-PBC ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | H5AN8G8NAFR-PBC | H5AN8G8NAFR-VKC | K4A8G165WC-BCRC | MT40A1G8AG-062E |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same (JEDEC x8 DDR4) | 78-ball FBGA - same (JEDEC x8 DDR4) |
| Brand | SK Hynix | SK Hynix | SK Hynix | Samsung Electronics | Micron Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | x8 (1G x 8) | x8 | x8 | x8 | x8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Die Revision | CJR | AFR | AFR | Samsung 8Gb DDR4 die | Micron 8Gb DDR4 die |
| Speed Grade Suffix | PBC | PBC (matched) | VKC (higher bin) | BCRC | -062E |
| Compliance | Lead-Free & Halogen-Free | Lead-Free & Halogen-Free (SK hynix DDR4) | Lead-Free & Halogen-Free (SK hynix DDR4) | RoHS DDR4 | RoHS DDR4 |
关键差异点
- Matched-speed same-family second source （对比 H5AN8G8NAFR-PBC)
- Cross-brand footprint compatibility （对比 K4A8G165WC-BCRC)
- CJR die ecosystem maturity （对比 MT40A1G8AG-062E)
设计说明
Route the address/command/control bus in fly-by topology with daisy-chained termination, per JEDEC DDR4 module and SoC layout guides. Match DQ to its DQS strobe within tight per-byte-lane skew budgets and keep all byte lanes within the controller-specified length window. Use a continuous VDD/VDDQ plane pair with one decoupling network per device; DDR4's lower 1.2 V swing leaves less noise margin than DDR3, so plane integrity directly affects training margins. Avoid routing DDR4 signals across plane splits or near switching regulators.
The H5AN8G8NCJR-PBC requires 1.2 V VDD/VDDQ plus the DDR4 VPP rail; size the VDDQ regulator for the sum of peak I/O current across all devices sharing the rail, including termination current. Estimated: for a 2-device x8 bus with typical DDR4 8Gb device currents, budget several hundred mA headroom above datasheet IDD averages. Sequence VPP and VDD per the memory controller power-rail spec, and verify brownout behavior - DDR4 does not tolerate undervoltage during active bursts without corrupting data.
Do not interchange speed-bin suffixes without requalification: a -PBC part substituted by a slower-binned device can fail timing closure, and a faster bin may exceed cost targets or require SPD/controller profile changes. On solder-down designs there is no SPD EEPROM, so firmware must store calibrated training results for the exact die revision (CJR versus AFR); swapping die revisions without retraining can cause boot failures on some SoC platforms. Always verify the exact -PBC data rate against the SK hynix speed-bin table before release.
合规信息
Datasheet listing for H5AN8G8NCJR-XXC states Lead-Free & Halogen-Free. REACH and conflict-minerals status not stated in provided data.