H5AN8G8NDJR vs H5AN8G6NCJR-VKC 对比
详细并排对比 H5AN8G8NDJR 出自 SK hynix 和 H5AN8G6NCJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G8NDJR | H5AN8G6NCJR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $24.50 | $60.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| 存储组织 | 1G x 8 | 512M x 16 |
| 数据速率 | 3200 MT/s | 2666 Mbps |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | 1.2 V (1.14V to 1.26V) |
| VDDQ | 1.2 V | — |
| VPP | 2.5 V | — |
| 工作温度 | 0°C to +95°C (Tc) | 0°C to +95°C |
| 封装 | FBGA-78 (7.5x11 mm) | FBGA-96 |
| CAS 延迟 | 22 (typical) | [DATA_NEEDED: CAS Latency] |
| tRCD | 22 ns | — |
| tRP | 22 ns | — |
| Burst Length | 8 and 4 (with burst chop) | 8 (BC4) |
| Self-Refresh Current | 30 mA (typical) | — |
| Active Standby Current | 60 mA (typical) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Operating Current (IDD2N) | — | 28 mA |
| Operating Current (IDD4R) | — | 45 mA |
| Row Address Bits | — | [DATA_NEEDED: Row Address Bits] |
| Column Address Bits | — | [DATA_NEEDED: Column Address Bits] |
| 无卤 | — | Yes |