H5AN8G8NDJR vs H5AN8G6NCJR-VKC Comparison
Detailed side-by-side comparison of H5AN8G8NDJR by SK hynix and H5AN8G6NCJR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G8NDJR | H5AN8G6NCJR-VKC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $24.50 | $60.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 512M x 16 |
| Data Rate | 3200 MT/s | 2666 Mbps |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | 1.2 V (1.14V to 1.26V) |
| VDDQ | 1.2 V | β |
| VPP | 2.5 V | β |
| Operating Temperature | 0Β°C to +95Β°C (Tc) | 0Β°C to +95Β°C |
| Package | FBGA-78 (7.5x11 mm) | FBGA-96 |
| CAS Latency | 22 (typical) | [DATA_NEEDED: CAS Latency] |
| tRCD | 22 ns | β |
| tRP | 22 ns | β |
| Burst Length | 8 and 4 (with burst chop) | 8 (BC4) |
| Self-Refresh Current | 30 mA (typical) | β |
| Active Standby Current | 60 mA (typical) | β |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Operating Current (IDD2N) | β | 28 mA |
| Operating Current (IDD4R) | β | 45 mA |
| Row Address Bits | β | [DATA_NEEDED: Row Address Bits] |
| Column Address Bits | β | [DATA_NEEDED: Column Address Bits] |
| Halogen-Free | β | Yes |