H5AN8G8NDJR vs H5AN8G6NCJR-VKC Comparison
Detailed side-by-side comparison of H5AN8G8NDJR by SK hynix and H5AN8G6NCJR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G8NDJR | H5AN8G6NCJR-VKC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 1G x 8 | — |
| Data Rate | 3200 MT/s | 2666 Mbps (MT/s) |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | 1.14 V to 1.26 V |
| VDDQ | 1.2 V | — |
| VPP | 2.5 V | — |
| Operating Temperature | 0°C to +95°C (Tc) | 0C to +95C |
| Package | FBGA-78 (7.5x11 mm) | FBGA-96 |
| CAS Latency | 22 (typical) | — |
| tRCD | 22 ns | — |
| tRP | 22 ns | — |
| Burst Length | 8 and 4 (with burst chop) | — |
| Self-Refresh Current | 30 mA (typical) | — |
| Active Standby Current | 60 mA (typical) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Memory Size | — | 8 Gbit |
| Memory Organization | — | 512M x 16 |
| Clock Frequency | — | 1.333 GHz |
| Interface | — | Parallel |
| Mounting Type | — | Surface Mount |
| Standby Current | — | 28 mA |
| Operating Current | — | 45 mA |
| Features | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration |
| Lead-Free / Halogen-Free | — | Yes (per datasheet description) |
| RoHS Status | — | Compliant |
| Lifecycle Status | — | Active |