H5ANAG6NAMR-UHC vs H5ANAG6NCJR-XNC 对比
详细并排对比 H5ANAG6NAMR-UHC 出自 SK hynix 和 H5ANAG6NCJR-XNC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG6NAMR-UHC | H5ANAG6NCJR-XNC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.50 | $84.97 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 16 Gbit (2 GB) | — |
| 存储组织 | 1G x 16 | — |
| Speed Grade / Data Rate | DDR4-2400 (UHC bin, PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Architecture | CMOS DDR4 with bank groups | — |
| Power Class | Normal Power | — |
| 封装 | FBGA-96 (PBGA96) | FBGA-96 |
| 安装类型 | Surface Mount (BGA solder ball) | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| Refresh | Self-refresh and auto-refresh (DDR4 standard 64 ms) | — |
| CAS 延迟 | [DATA_NEEDED: CL for UHC bin] | — |
| 接口类型 | Parallel, synchronous, double data rate | — |
| Available Speed Bins (family) | PB / RD / TF / UH / VK | — |
| Application Class | Main memory, embedded, industrial | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| 生命周期状态 | Active production | — |
| 存储容量 | — | 16 Gbit |
| Memory Organization | — | 1G x 16 |
| 数据速率 | — | 3200 Mbps/pin |
| Supply Voltage Range | — | 1.14 V to 1.26 V (VDD/VDDQ) |
| 接口 | — | Parallel |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Packaging | — | Tray |