H5ANAG6NBJR-VKC vs H5ANAG8NBJR-PBC 对比
详细并排对比 H5ANAG6NBJR-VKC 出自 SK hynix 和 H5ANAG8NBJR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG6NBJR-VKC | H5ANAG8NBJR-PBC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $15.00 | $31.50 |
| Manufacturer | SK Hynix | — |
| Part Number | H5ANAG6NBJR-VKC | — |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 16Gb (2GB) | — |
| 存储组织 | [DATA_NEEDED: x16 organization per datasheet] | x8 |
| 数据速率 | 2666 Mbps (per family reference, VKC speed code) | — |
| 电源电压 | 1.2 V (DDR4 standard) | — |
| 接口 | DDR4, SSTL-12 | — |
| 封装 | FBGA-96 (PBGA96) | FBGA-78 (7.5 mm x 11 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -40C to +95C (family grade reference) | [DATA_NEEDED: operating temperature range] |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Asynchronous Reset | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) |
| Density | — | 16 Gbit (2 GB) |
| Supply Voltage (VDD) | — | 1.2 V |
| Speed Grade / Data Rate | — | PBC suffix, DDR4-2666 class |
| Bank Architecture | — | 16 banks in 4 bank groups (DDR4 standard) |
| Prefetch | — | 8n |
| 接口类型 | — | Parallel, SSTL12 |
| CAS Latency (typical bin) | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | Self refresh, 1x/2x/4x refresh modes |
| Die Revision | — | BJR |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |
| Standard Package Quantity | — | [DATA_NEEDED: standard quantity] |