H5ANAG6NCJR-XN vs MT40A1G16TD-062E 对比
详细并排对比 H5ANAG6NCJR-XN 出自 SK hynix 和 MT40A1G16TD-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG6NCJR-XN | MT40A1G16TD-062E |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $71.20 | $18.41 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit (1G x 16) | — |
| 存储组织 | 1G x 16 | 1G x 16 |
| 数据速率 | 3200 Mbps/pin (DDR4-3200) | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | — |
| 封装 | FBGA-96 (96-ball) | 96-ball FBGA (7.5 x 13 mm) |
| Package Width | 8 mm | — |
| 安装类型 | Surface Mount (BGA) | Surface Mount |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask (DM) | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC (Command/Address) | Yes | — |
| Write Leveling | Yes | — |
| Maximum Standby Current | 0.074 A (per Vyrian listing) | — |
| RoHS 状态 | Compliant | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | TC maximum up to 95 C |
| CAS 延迟 | [DATA_NEEDED: CAS latency for -XN speed grade] | — |
| 存储容量 | — | 16 Gbit |
| Clock Frequency | — | 1.6 GHz |
| Access Time | — | 19 ns |
| 接口 | — | POD12 (1.2V pseudo open-drain) |
| VDD Supply Voltage | — | 1.2 V +/- 60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/- 60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV, +250 mV |
| Bank Architecture | — | 8 banks (x16 configuration) |
| VREFDQ | — | On-die, internal, adjustable generation |
| Refresh | — | 8192-cycle, 64 ms up to 85C; 32 ms from 85C to 95C |
| Speed Grade | — | -062E |
| Product Line Suffix | — | AAT:F (automotive AEC grade available per Micron catalog) |