H5ANAG6NCJR-XN vs MT40A1G16TD-062E Comparison

Detailed side-by-side comparison of H5ANAG6NCJR-XN by SK hynix and MT40A1G16TD-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A1G16TD-062E MT40A1G16TD-062E - 16Gb DDR4-3200 x16 SDRAM FBGA | Micron

MT40A1G16TD-062E - 16Gb DDR4-3200 x16 SDRAM FBGA | Micron

MT40A1G16TD-062E ✓ Active

Specification Comparison

Parameter H5ANAG6NCJR-XN MT40A1G16TD-062E
Brand SK hynix Micron Technology
Category Memory ICs DRAM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $71.20 $18.41
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit (1G x 16) —
Organization 1G x 16 1G x 16
Data Rate 3200 Mbps/pin (DDR4-3200) —
Supply Voltage (VDD) 1.14 V to 1.26 V —
Package FBGA-96 (96-ball) 96-ball FBGA (7.5 x 13 mm)
Package Width 8 mm —
Mounting Type Surface Mount (BGA) Surface Mount
Auto Self-Refresh Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask (DM) Yes —
Dynamic On-Chip Termination (ODT) Yes —
ZQ Calibration Yes —
CRC (Command/Address) Yes —
Write Leveling Yes —
Maximum Standby Current 0.074 A (per Vyrian listing) —
RoHS Status Compliant —
Operating Temperature [DATA_NEEDED: operating temperature range] TC maximum up to 95 C
CAS Latency [DATA_NEEDED: CAS latency for -XN speed grade] —
Memory Size — 16 Gbit
Clock Frequency — 1.6 GHz
Access Time — 19 ns
Interface — POD12 (1.2V pseudo open-drain)
VDD Supply Voltage — 1.2 V +/- 60 mV
VDDQ Supply Voltage — 1.2 V +/- 60 mV
VPP Supply Voltage — 2.5 V, -125 mV, +250 mV
Bank Architecture — 8 banks (x16 configuration)
VREFDQ — On-die, internal, adjustable generation
Refresh — 8192-cycle, 64 ms up to 85C; 32 ms from 85C to 95C
Speed Grade — -062E
Product Line Suffix — AAT:F (automotive AEC grade available per Micron catalog)

Datasheets & Resources

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