H5ANAG6NCR-PBC vs H5ANAG6NBJR-PBC 对比

详细并排对比 H5ANAG6NCR-PBC 出自 SK hynix 和 H5ANAG6NBJR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG6NCR-PBC H5ANAG6NCR-PBC - 16Gb DDR4 SDRAM x16, FBGA-96 | SK hynix

H5ANAG6NCR-PBC - 16Gb DDR4 SDRAM x16, FBGA-96 | SK hynix

H5ANAG6NCR-PBC ✓ 量产中
SK hynix
H5ANAG6NBJR-PBC H5ANAG6NBJR-PBC - 16Gb DDR4 SDRAM DRAM Chip | SK hynix

H5ANAG6NBJR-PBC - 16Gb DDR4 SDRAM DRAM Chip | SK hynix

H5ANAG6NBJR-PBC ✓ 量产中

规格对比

参数 H5ANAG6NCR-PBC H5ANAG6NBJR-PBC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $70.20 $6.45
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 16Gb (2GB) 16 Gb (2 GB)
存储组织 x16 (1G x 16) [DATA_NEEDED: Organization x16/x8]
电源电压 1.14 V to 1.26 V (nominal 1.2 V) 1.2 V
Transfer Rate 3200 Mbps (family, per XNCR datasheet; PBC speed grade [DATA_NEEDED: exact speed grade Mbps]) —
封装 FBGA-96 FBGA-96
Number of Terminals 96 balls —
工作温度 0C to 85C [DATA_NEEDED: Operating Temperature]
安装类型 Surface Mount Surface Mount
Auto Self-Refresh Yes —
Auto Precharge Yes —
Asynchronous Reset Yes Yes
Data Mask Yes —
Dynamic ODT Yes —
ZQ Calibration Yes Yes
CRC Function Yes Yes
Write Leveling Yes Yes
RoHS 状态 Compliant [DATA_NEEDED: RoHS Status]
Maximum Standby Current [DATA_NEEDED: maximum standby current for PBC speed grade] —
CAS 延迟 [DATA_NEEDED: CAS latency for PBC speed grade] —
Generation Max Data Rate — 3200 MT/s (family max)
Self Refresh — Auto self-refresh
Data Mask Function — Yes
On-Chip Termination — Dynamic ODT
Speed Bin (PBC) — [DATA_NEEDED: Speed grade MT/s]

数据手册与资源

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