H5ANAG8NBJR-PBC vs K4A8G085WB-BCPB 对比
详细并排对比 H5ANAG8NBJR-PBC 出自 SK hynix 和 K4A8G085WB-BCPB 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG8NBJR-PBC | K4A8G085WB-BCPB |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $31.50 | $13.78 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit (2 GB) | 8 Gbit |
| 存储组织 | x8 | 1G x 8 |
| Supply Voltage (VDD) | 1.2 V | — |
| Speed Grade / Data Rate | PBC suffix, DDR4-2666 class | — |
| 封装 | FBGA-78 (7.5 mm x 11 mm) | 78-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| Bank Architecture | 16 banks in 4 bank groups (DDR4 standard) | 16 banks (4 bank groups) |
| Prefetch | 8n | — |
| 接口类型 | Parallel, SSTL12 | SSTL-12 |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| CAS Latency (typical bin) | [DATA_NEEDED: CAS latency] | — |
| Refresh | Self refresh, 1x/2x/4x refresh modes | — |
| Die Revision | BJR | — |
| RoHS 状态 | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) | Compliant |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| Standard Package Quantity | [DATA_NEEDED: standard quantity] | — |
| 电源电压 | — | 1.2 V (nominal) |
| 数据速率 | — | 3200 Mbps (PC4-25600) |
| Speed Grade | — | BC |
| CAS Latency (CL) | — | 22 |
| Burst Length | — | 8 |
| Refresh Interval | — | 7.8 us (up to 85C) |
| Termination | — | ODT / dynamic ODT |
| Self-Refresh | — | Temperature-Compensated Self-Refresh (TCSR) |
| Package Dimensions | — | 11 mm x 11 mm |
| Operating Mode | — | DLL enabled |