H5ANAG8NBJR-PBC vs K4A8G085WB-BCPB Vergleich
Detaillierter Direktvergleich von H5ANAG8NBJR-PBC von SK hynix und K4A8G085WB-BCPB von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG8NBJR-PBC | K4A8G085WB-BCPB |
|---|---|---|
| Marke | SK hynix | Samsung Electronics |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $31,50 | $13,78 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit (2 GB) | 8 Gbit |
| Speicherorganisation | x8 | 1G x 8 |
| Supply Voltage (VDD) | 1.2 V | — |
| Speed Grade / Data Rate | PBC suffix, DDR4-2666 class | — |
| Gehäuse | FBGA-78 (7.5 mm x 11 mm) | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount (BGA) |
| Bank Architecture | 16 banks in 4 bank groups (DDR4 standard) | 16 banks (4 bank groups) |
| Prefetch | 8n | — |
| Schnittstellentyp | Parallel, SSTL12 | SSTL-12 |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | — |
| CAS Latency (typical bin) | [DATA_NEEDED: CAS latency] | — |
| Refresh | Self refresh, 1x/2x/4x refresh modes | — |
| Die Revision | BJR | — |
| RoHS-Status | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) | Compliant |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Standard Package Quantity | [DATA_NEEDED: standard quantity] | — |
| Versorgungsspannung | — | 1.2 V (nominal) |
| Datenrate | — | 3200 Mbps (PC4-25600) |
| Speed Grade | — | BC |
| CAS Latency (CL) | — | 22 |
| Burst Length | — | 8 |
| Refresh Interval | — | 7.8 us (up to 85C) |
| Termination | — | ODT / dynamic ODT |
| Self-Refresh | — | Temperature-Compensated Self-Refresh (TCSR) |
| Package Dimensions | — | 11 mm x 11 mm |
| Operating Mode | — | DLL enabled |