H5ANAG8NBJR-PBC vs MT40A1G8AG-062E 对比
详细并排对比 H5ANAG8NBJR-PBC 出自 SK hynix 和 MT40A1G8AG-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG8NBJR-PBC | MT40A1G8AG-062E |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $31.50 | $3.10 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit (2 GB) | — |
| 存储组织 | x8 | 1G x 8 |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Speed Grade / Data Rate | PBC suffix, DDR4-2666 class | — |
| 封装 | FBGA-78 (7.5 mm x 11 mm) | 78-FBGA (7.5 x 11 mm) |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| Bank Architecture | 16 banks in 4 bank groups (DDR4 standard) | — |
| Prefetch | 8n | — |
| 接口类型 | Parallel, SSTL12 | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| CAS Latency (typical bin) | [DATA_NEEDED: CAS latency] | — |
| Refresh | Self refresh, 1x/2x/4x refresh modes | — |
| Die Revision | BJR | — |
| RoHS 状态 | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) | [DATA_NEEDED: RoHS status] |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| Standard Package Quantity | [DATA_NEEDED: standard quantity] | — |
| 存储容量 | — | 8 Gbit |
| 接口 | — | Parallel |
| Clock Frequency | — | 1.6 GHz (DDR4-3200, 3200 MT/s data rate) |
| Clock Cycle Time | — | 19 ns class (-062E speed grade) |
| Temperature Grade | — | Automotive (AUT) |
| Access Time (CAS Latency class) | — | DDR4-3200 timing class (tAA per datasheet) |
| Bank Group Architecture | — | Yes (DDR4 bank groups) |
| Termination | — | On-Die Termination (ODT) |
| CA Parity | — | Supported (DDR4 command/address parity) |
| Packaging Option | — | Tape and Reel (TR / :R suffix) |
| 工作温度范围 | — | [DATA_NEEDED: operating temperature range] |
| Refresh Rate | — | [DATA_NEEDED: refresh rate] |