H5ANAG8NCMR-VKC vs K4AAG085WM-BCWE 对比
详细并排对比 H5ANAG8NCMR-VKC 出自 SK hynix 和 K4AAG085WM-BCWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG8NCMR-VKC | K4AAG085WM-BCWE |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.05 | $7.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 16 Gb | — |
| Memory Organization | 2G x 8 | — |
| 数据速率 | 2666 Mbps/pin (DDR4-2666) | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| 封装 | FBGA-78 | 78FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| Speed Grade | VK (per SK hynix speed-bin suffix) | — |
| Power Class | Normal Power | — |
| Bank Groups | 4 | — |
| Banks Total | 16 | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| CAS 延迟 | [DATA_NEEDED: CAS latency for VK speed bin] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Packaging | [DATA_NEEDED: standard packing quantity] | — |
| Manufacturer Process | CMOS DRAM | — |
| Density | — | 16 Gb |
| 存储组织 | — | 2G x 8 |
| 电源电压 | — | 1.2 V |
| 接口 | — | DDR4 (JEDEC-standard) |
| Bank Group Architecture | — | Yes (DDR4) |
| Speed Grade Suffix | — | -BCWE |
| Application Class | — | Memory IC / Storage Component |
| Power Reduction vs DDR3 | — | Approx. 25% lower (per Samsung DDR4 literature) |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |