H5TC4G63AFR-H9A vs H5TC4G63CFR-H9A 对比

详细并排对比 H5TC4G63AFR-H9A 出自 SK hynix 和 H5TC4G63CFR-H9A 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5TC4G63AFR-H9A H5TC4G63AFR-H9A - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63AFR-H9A - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63AFR-H9A ✓ 量产中
SK hynix
H5TC4G63CFR-H9A H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix

H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix

H5TC4G63CFR-H9A ✓ 量产中

规格对比

参数 H5TC4G63AFR-H9A H5TC4G63CFR-H9A
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.50 $6.50
存储器类型 DDR3L SDRAM DDR3L SDRAM
Density 4 Gb —
存储组织 256M x 16 256M x 16
电源电压 1.35 V —
数据速率 1866 Mbps (PC3-14900) [DATA_NEEDED: Data rate (e.g., 1866 Mbps)]
CAS 延迟 13 [DATA_NEEDED: CAS latency]
封装 96-ball FBGA 96-ball TFBGA
工作温度 0C to +95C (TC) —
Lead-Free Yes Yes
无卤 Yes Yes
RoHS Compliant Yes —
Burst Length 8, 4 8, 4 (with burst chop)
On-Die Termination Yes —
Self-Refresh Yes —
Auto-Refresh Yes —
Memory Density — 4Gb (4294967296 bit)
Supply Voltage (VDD) — 1.35V + 0.100 / - 0.067V
Supply Voltage (VDDQ) — 1.35V + 0.100 / - 0.067V
Number of Terminals — 96
Package Shape — RECTANGULAR
工作温度范围 — [DATA_NEEDED: Operating temperature range]
RoHS 状态 — Compliant
Differential Clock Inputs — Yes (CK, CK)
Differential Data Strobe — Yes (DQS, DQS)
On-Chip DLL — Yes
DM (Data Mask) — Yes

数据手册与资源

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