H5TC4G63AFR-PBJ vs NT5CC256M16ER-EK 对比
详细并排对比 H5TC4G63AFR-PBJ 出自 SK hynix 和 NT5CC256M16ER-EK 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5TC4G63AFR-PBJ | NT5CC256M16ER-EK |
|---|---|---|
| 品牌 | SK hynix | Nanya Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.50 | $24.00 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| 存储容量 | 4 Gb (256M x 16) | — |
| 电源电压 | 1.35 V | 1.35 V |
| 封装 | 96-ball TFBGA | TFBGA-96 |
| Temperature Grade | Industrial (-40°C to +95°C) | — |
| Refresh Cycles | 8192 | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| 数据速率 | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] | 933 MHz (DDR3L-1866) |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CAS Latency] |
| Access Time | 0.225 ns (from H5TC4G63AFR-PBR datasheet) | — |
| Auto Self-Refresh | Yes | Yes |
| Data Mask | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | Compliant |
| Density | — | 4 Gbit |
| 存储组织 | — | 256M x 16 |
| 工作温度 | — | 0°C to +95°C |
| Burst Length | — | 8, 4 (with burst chop) |
| 接口 | — | Parallel |
| 安装类型 | — | Surface Mount |
| Lead-Free | — | Yes |
| Dynamic ODT | — | Yes |