H5TC4G63AFR-PBJ vs NT5CC256M16ER-EK Comparison
Detailed side-by-side comparison of H5TC4G63AFR-PBJ by SK hynix and NT5CC256M16ER-EK by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5TC4G63AFR-PBJ | NT5CC256M16ER-EK |
|---|---|---|
| Brand | SK hynix | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gb (256M x 16) | — |
| Supply Voltage | 1.35 V | 1.35 V |
| Package | 96-ball TFBGA | TFBGA-96 |
| Temperature Grade | Industrial (-40°C to +95°C) | — |
| Refresh Cycles | 8192 | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| Data Rate | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] | 933 MHz (DDR3L-1866) |
| CAS Latency | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CAS Latency] |
| Access Time | 0.225 ns (from H5TC4G63AFR-PBR datasheet) | — |
| Auto Self-Refresh | Yes | Yes |
| Data Mask | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| RoHS Status | [DATA_NEEDED: RoHS Status] | Compliant |
| Density | — | 4 Gbit |
| Organization | — | 256M x 16 |
| Operating Temperature | — | 0°C to +95°C |
| Burst Length | — | 8, 4 (with burst chop) |
| Interface | — | Parallel |
| Mounting Type | — | Surface Mount |
| Lead-Free | — | Yes |
| Dynamic ODT | — | Yes |