H5TC4G63CFR-H9J vs K4B4G1646E-BMK0 对比
详细并排对比 H5TC4G63CFR-H9J 出自 SK hynix 和 K4B4G1646E-BMK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5TC4G63CFR-H9J | K4B4G1646E-BMK0 |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.00 | $6.50 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V +0.100/-0.067V | — |
| Speed Grade | -H9 (1866 Mbps / PC3-14900) | 1600 Mbps |
| 封装 | 96-ball TFBGA | 96-FBGA |
| Number of Terminals | 96 | — |
| Temperature Grade | Industrial | — |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| RoHS Compliant | Yes | — |
| Clock Input | Fully differential (CK, CK) | — |
| Data Strobe | Differential (DQS, DQS) | — |
| On-Chip DLL | Yes | — |
| Data Mask (DM) | Yes | — |
| Voltage | — | 1.35 V |
| 工作温度 | — | -40°C to +95°C |
| 接口 | — | Parallel |
| Clock Frequency | — | 800 MHz |
| 数据速率 | — | 1600 Mbps |
| 安装类型 | — | Surface Mount |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |