H5TC4G63CFR-H9J vs K4B4G1646E-BMK0 Comparison
Detailed side-by-side comparison of H5TC4G63CFR-H9J by SK hynix and K4B4G1646E-BMK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5TC4G63CFR-H9J | K4B4G1646E-BMK0 |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V +0.100/-0.067V | — |
| Speed Grade | -H9 (1866 Mbps / PC3-14900) | 1600 Mbps |
| Package | 96-ball TFBGA | 96-FBGA |
| Number of Terminals | 96 | — |
| Temperature Grade | Industrial | — |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| RoHS Compliant | Yes | — |
| Clock Input | Fully differential (CK, CK) | — |
| Data Strobe | Differential (DQS, DQS) | — |
| On-Chip DLL | Yes | — |
| Data Mask (DM) | Yes | — |
| Voltage | — | 1.35 V |
| Operating Temperature | — | -40°C to +95°C |
| Interface | — | Parallel |
| Clock Frequency | — | 800 MHz |
| Data Rate | — | 1600 Mbps |
| Mounting Type | — | Surface Mount |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |