H5TC4G63CFR-PBA vs H5TC4G63AFR-G7A 对比

详细并排对比 H5TC4G63CFR-PBA 出自 SK hynix 和 H5TC4G63AFR-G7A 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5TC4G63CFR-PBA H5TC4G63CFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-PBA ✓ 量产中
SK hynix
H5TC4G63AFR-G7A H5TC4G63AFR-G7A - 4Gb DDR3L SDRAM 1.35V | SK Hynix

H5TC4G63AFR-G7A - 4Gb DDR3L SDRAM 1.35V | SK Hynix

H5TC4G63AFR-G7A ✓ 量产中

规格对比

参数 H5TC4G63CFR-PBA H5TC4G63AFR-G7A
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.23 $6.50
存储器类型 DDR3L SDRAM DDR3L SDRAM
Density 4Gb 4Gb
存储组织 256M x 16 256M x 16
Supply Voltage (VDD/VDDQ) 1.35V +0.100/-0.067V —
封装 96-ball FBGA (PBGA96) 96-ball FBGA
Clock Input Fully differential (CK, CK) —
Data Strobe Differential (DQS, DQS) —
On-chip DLL Yes —
Data Mask (DM) Yes —
Auto Precharge Yes —
Auto Self-Refresh Yes —
Dynamic ODT Yes —
ZQ Calibration Yes —
Write Leveling Yes —
Asynchronous Reset Yes —
RoHS Compliant Compliant
无卤 Yes Yes
Lead-Free Yes Yes
电源电压 — 1.35V
数据速率 — 1600 Mbps (PC3-12800)
工作温度 — 0°C to 95°C (case)
CAS 延迟 — Programmable (e.g., 11)
Burst Length — 8 and 4
Refresh Period — 7.8us at 85°C
On-Die Termination — Supported
Process Technology — CMOS

数据手册与资源

浏览全部产品 创建 BOM 获取报价