H5TC4G63CFR-PBA vs H5TC4G63AFR-G7A Comparison

Detailed side-by-side comparison of H5TC4G63CFR-PBA by SK hynix and H5TC4G63AFR-G7A by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5TC4G63CFR-PBA H5TC4G63CFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-PBA ✓ Active
SK hynix
H5TC4G63AFR-G7A H5TC4G63AFR-G7A - 4Gb DDR3L SDRAM 1.35V | SK Hynix

H5TC4G63AFR-G7A - 4Gb DDR3L SDRAM 1.35V | SK Hynix

H5TC4G63AFR-G7A ✓ Active

Specification Comparison

Parameter H5TC4G63CFR-PBA H5TC4G63AFR-G7A
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $6.23 $6.50
Memory Type DDR3L SDRAM DDR3L SDRAM
Density 4Gb 4Gb
Organization 256M x 16 256M x 16
Supply Voltage (VDD/VDDQ) 1.35V +0.100/-0.067V —
Package 96-ball FBGA (PBGA96) 96-ball FBGA
Clock Input Fully differential (CK, CK) —
Data Strobe Differential (DQS, DQS) —
On-chip DLL Yes —
Data Mask (DM) Yes —
Auto Precharge Yes —
Auto Self-Refresh Yes —
Dynamic ODT Yes —
ZQ Calibration Yes —
Write Leveling Yes —
Asynchronous Reset Yes —
RoHS Compliant Compliant
Halogen Free Yes Yes
Lead-Free Yes Yes
Supply Voltage — 1.35V
Data Rate — 1600 Mbps (PC3-12800)
Operating Temperature — 0°C to 95°C (case)
CAS Latency — Programmable (e.g., 11)
Burst Length — 8 and 4
Refresh Period — 7.8us at 85°C
On-Die Termination — Supported
Process Technology — CMOS

Datasheets & Resources

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