H5TC4G63CFR-PBL vs H5TC4G63CFR-PBA 对比
详细并排对比 H5TC4G63CFR-PBL 出自 SK hynix 和 H5TC4G63CFR-PBA 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5TC4G63CFR-PBL | H5TC4G63CFR-PBA |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.50 | $6.23 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| 存储容量 | 4 Gb (256M x 16) | — |
| 电源电压 | 1.35 V | — |
| 数据速率 | 1600 Mbps (PC3L-12800) | — |
| 封装 | 96-ball FBGA (TFBGA) | 96-ball FBGA (PBGA96) |
| Number of Terminals | 96 | — |
| Package Shape | RECTANGULAR | — |
| Terminal Form | BALL | — |
| Burst Length | 8 | — |
| CAS 延迟 | 11, 12, 13 | — |
| Number of Banks | 8 | — |
| Refresh Period | 7.8 us at 85C | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| 无卤 | Yes | Yes |
| Density | — | 4Gb |
| 存储组织 | — | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | — | 1.35V +0.100/-0.067V |
| Clock Input | — | Fully differential (CK, CK) |
| Data Strobe | — | Differential (DQS, DQS) |
| On-chip DLL | — | Yes |
| Data Mask (DM) | — | Yes |
| Auto Precharge | — | Yes |
| Auto Self-Refresh | — | Yes |
| Dynamic ODT | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |