H5TC4G63CFR-PBL - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
料号： H5TC4G63CFR-PBL ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.2 | $720.00 |
| 500 | $6.8 | $3,400.00 |
| 1,000 | $6.5 | $6,500.00 |
H5TC4G63CFR-PBL 概述
DDR3L SDRAM is a type of synchronous dynamic random-access memory that transfers data on both edges of the clock signal, doubling the data rate compared to single data rate SDRAM. The 'L' denotes low voltage operation at 1.35V, reducing power consumption by about 15% compared to standard DDR3 at 1.5V. This makes DDR3L a preferred choice for battery-powered and thermally constrained designs.
Key features of the H5TC4G63CFR-PBL include a data rate of 1600 Mbps (PC3L-12800), a burst length of 8, and support for on-die termination (ODT) and posted CAS. The device also features auto refresh and self refresh modes, with a typical refresh period of 7.8 us at 85C. The 96-ball FBGA package provides a compact footprint suitable for high-density PCB layouts.
The H5TC4G63CFR-PBL uses a high-performance CMOS process technology, ensuring fast access times and low power consumption. The memory array is organized into 8 banks, each with 32K rows, providing efficient row activation and precharge operations. The device supports a programmable CAS latency of 11, 12, and 13, allowing flexibility in system timing.
Typical applications include main memory for laptops, ultrabooks, and embedded systems, as well as networking equipment such as routers and switches, and industrial automation controllers. The low voltage and high bandwidth make it suitable for applications requiring high memory density and low power.
When designing with this device, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize power supply noise. Also, follow the JEDEC DDR3L layout guidelines for signal integrity, especially for high-speed data lines.
直接替换替代料： H5TC4G63CFR-PBL ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： H5TC4G63CFR-PBL （相同外形与封装尺寸） ——差异在于 Package, Burst Length, Data Rate, CAS Latency, Supply Voltage.
快速对比工具——选择替代料号进行并排对比：
H5TC4G63CFR-PBA
✅ 直接替换✓ 有现货
$6.23 / 个
查看数据手册 →H5TC4G63AFR-PBR
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$5.9091 / 个
查看数据手册 →H5TC4G63MFR-PBA
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$6.5 / 个
查看数据手册 →K4B4G1646D-BCK00
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$5.9 / 个
查看数据手册 →MT41K256M16HA-125
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$6.3636 / 个
查看数据手册 →NT5CC256M16DP-DI
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$6.5 / 个
查看数据手册 →H5TC4G63CFR-PBL 最大额定值与电气特性
| 存储器类型 | DDR3L SDRAM |
| 存储容量 | 4 Gb (256M x 16) |
| 电源电压 | 1.35 V |
| 数据速率 | 1600 Mbps (PC3L-12800) |
| 封装 | 96-ball FBGA (TFBGA) |
| Number of Terminals | 96 |
| Package Shape | RECTANGULAR |
| Terminal Form | BALL |
| Burst Length | 8 |
| CAS 延迟 | 11, 12, 13 |
| Number of Banks | 8 |
| Refresh Period | 7.8 us at 85C |
| RoHS | Compliant |
| Lead-Free | Yes |
| 无卤 | Yes |
H5TC4G63CFR-PBL 引脚配置
| 引脚 A1 | VDD — Power supply for core logic |
| 引脚 A2 | VSS — Ground |
| 引脚 B1 | DQ0 — Data input/output 0 |
| 引脚 B2 | DQ1 — Data input/output 1 |
| 引脚 C1 | VDDQ — Power supply for output buffers |
| 引脚 C2 | VSSQ — Ground for output buffers |
| 引脚 D1 | DQ2 — Data input/output 2 |
| 引脚 D2 | DQ3 — Data input/output 3 |
| 引脚 E1 | A0 — Address input 0 |
| 引脚 E2 | A1 — Address input 1 |
| 引脚 F1 | BA0 — Bank address 0 |
| 引脚 F2 | BA1 — Bank address 1 |
| 引脚 G1 | CK — Clock input |
| 引脚 G2 | CK# — Complementary clock input |
| 引脚 H1 | CKE — Clock enable |
| 引脚 H2 | CS# — Chip select |
典型应用
H5TC4G63CFR-PBL 适用于 6 应用s: Mobile Devices, Embedded Systems, Networking Equipment, Laptops and Ultrabooks, Industrial Automation, Automotive Infotainment.
Mobile Devices
The H5TC4G63CFR-PBL's low 1.35V operation and compact 96-ball FBGA package make it ideal for smartphones and tablets where power efficiency and board space are critical. Its 1600 Mbps data rate supports smooth multitasking and multimedia performance while extending battery life.
推荐
Embedded Systems
In embedded systems such as industrial controllers and IoT gateways, the H5TC4G63CFR-PBL provides high memory density with low power consumption. Its 8-bank architecture and programmable CAS latency allow optimization for real-time tasks, while the 1.35V supply reduces thermal load in enclosed environments.
推荐
Networking Equipment
Routers, switches, and network appliances benefit from the H5TC4G63CFR-PBL's high bandwidth and low power. The 1600 Mbps data rate handles packet buffering and routing tables efficiently, while the 1.35V operation reduces power dissipation in always-on networking hardware.
推荐
Laptops and Ultrabooks
The H5TC4G63CFR-PBL is suitable for main memory in laptops and ultrabooks, offering 4Gb capacity in a small footprint. Its low voltage and self-refresh modes help extend battery life during idle periods, while the high data rate supports demanding applications like video editing and gaming.
推荐
Industrial Automation
In industrial automation controllers, the H5TC4G63CFR-PBL provides reliable memory operation over a wide temperature range. Its robust design and low power consumption make it suitable for factory floor environments where heat and vibration are concerns.
推荐
Automotive Infotainment
The H5TC4G63CFR-PBL can be used in automotive infotainment systems, providing high memory bandwidth for navigation, multimedia, and connectivity features. Its low voltage operation helps manage thermal constraints in vehicle cabins.
推荐
推荐产品汇总
工程参考数据： H5TC4G63CFR-PBL ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | H5TC4G63CFR-PBA | H5TC4G63AFR-PBR | K4B4G1646D-BCK00 |
|---|---|---|---|---|
| Package | 96-ball FBGA (TFBGA) | 96-ball FBGA (TFBGA) | 96-ball FBGA (TFBGA) | 96-ball FBGA (TFBGA) |
| Brand | SK hynix | SK hynix | SK hynix | Samsung |
| Memory Size | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1600 Mbps | 1866 Mbps | 1600 Mbps | 1600 Mbps |
| CAS Latency | 11, 12, 13 | 11, 12, 13 | 11, 12, 13 | 11, 12, 13 |
| RoHS | Compliant | Compliant | Compliant | Compliant |
关键差异点
- Low voltage operation at 1.35V （对比 K4B4G1646D-BCK00)
- High data rate of 1600 Mbps （对比 H5TC4G63CFR-PBA)
- RoHS compliant and halogen-free （对比 MT41K256M16HA-125)
设计说明
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and follow JEDEC DDR3L layout guidelines for signal integrity, especially for high-speed data lines.
The H5TC4G63CFR-PBL operates at 1.35V, reducing power dissipation compared to 1.5V DDR3. However, in high-density systems, ensure adequate airflow or heatsinking to keep the junction temperature within the specified range, especially during heavy memory access.
For data rates of 1600 Mbps, maintain controlled impedance of 50 ohms for data lines and 40 ohms for address/command lines. Use series termination resistors and avoid stubs to reduce reflections and crosstalk.
合规信息
Lead-free and halogen-free per datasheet. RoHS compliant.
