H5TQ4G63AFR-H9C vs H5TQ4G63EFR-RDC 对比

详细并排对比 H5TQ4G63AFR-H9C 出自 SK hynix 和 H5TQ4G63EFR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5TQ4G63AFR-H9C H5TQ4G63AFR-H9C - 4Gb DDR3 SDRAM 256Mx16 | SK Hynix

H5TQ4G63AFR-H9C - 4Gb DDR3 SDRAM 256Mx16 | SK Hynix

H5TQ4G63AFR-H9C ✓ 量产中
SK hynix
H5TQ4G63EFR-RDC H5TQ4G63EFR-RDC - 4Gb DDR3 SDRAM, 1.5V FBGA-96 | SK hynix

H5TQ4G63EFR-RDC - 4Gb DDR3 SDRAM, 1.5V FBGA-96 | SK hynix

H5TQ4G63EFR-RDC ✓ 量产中

规格对比

参数 H5TQ4G63AFR-H9C H5TQ4G63EFR-RDC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.50 $12.30
存储器类型 DDR3 SDRAM DDR3 SDRAM
Density 4 Gb —
存储组织 256M x 16 512M x 8
电源电压 1.5 V —
Clock Speed (tCK) 0.255 ns —
封装 96-ball TFBGA FBGA-96
Package Shape RECTANGULAR —
Refresh Cycles 8192 —
Number of Terminals 96 —
Temperature Grade OTHER —
RoHS Compliant —
无卤 Yes —
安装类型 Surface Mount Surface Mount
数据速率 3.9 Gbps per pin (approx) —
Ball Pitch 0.8 mm —
存储容量 — 4 Gbit
Supply Voltage (VDD) — 1.425 V to 1.575 V (1.5 V typ.)
Clock Rate — 1.066 GHz class
工作温度 — 0C to +95C (RDC grade)
接口 — DDR3 (parallel, JEDEC DDR3 command interface)
Data Mask — Yes (DM function)
On-Chip Termination — Dynamic ODT
ZQ Calibration — Yes
Write Leveling — Yes
Asynchronous Reset — Yes
Auto Self-Refresh — Yes
Auto Precharge — Yes
RoHS 状态 — Compliant
Manufacturer — SK hynix (Hynix Semiconductor)

数据手册与资源

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