H5TQ4G63EFR-RDC vs H5TQ4G63AFR-H9C 对比
详细并排对比 H5TQ4G63EFR-RDC 出自 SK hynix 和 H5TQ4G63AFR-H9C 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5TQ4G63EFR-RDC | H5TQ4G63AFR-H9C |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $12.30 | $6.50 |
| 存储器类型 | DDR3 SDRAM | DDR3 SDRAM |
| 存储容量 | 4 Gbit | — |
| 存储组织 | 512M x 8 | 256M x 16 |
| Supply Voltage (VDD) | 1.425 V to 1.575 V (1.5 V typ.) | — |
| Clock Rate | 1.066 GHz class | — |
| 封装 | FBGA-96 | 96-ball TFBGA |
| 工作温度 | 0C to +95C (RDC grade) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | DDR3 (parallel, JEDEC DDR3 command interface) | — |
| Data Mask | Yes (DM function) | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| RoHS 状态 | Compliant | — |
| Manufacturer | SK hynix (Hynix Semiconductor) | — |
| Density | — | 4 Gb |
| 电源电压 | — | 1.5 V |
| Clock Speed (tCK) | — | 0.255 ns |
| Package Shape | — | RECTANGULAR |
| Refresh Cycles | — | 8192 |
| Number of Terminals | — | 96 |
| Temperature Grade | — | OTHER |
| RoHS | — | Compliant |
| 无卤 | — | Yes |
| 数据速率 | — | 3.9 Gbps per pin (approx) |
| Ball Pitch | — | 0.8 mm |