IAUC50N08S5L096ATMA1 vs IAUC90N10S5N062ATMA1 对比

详细并排对比 IAUC50N08S5L096ATMA1 出自 Infineon 和 IAUC90N10S5N062ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 ✓ 量产中
Infineon
IAUC90N10S5N062ATMA1 IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon

IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon

IAUC90N10S5N062ATMA1 ✓ 量产中

规格对比

参数 IAUC50N08S5L096ATMA1 IAUC90N10S5N062ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.98 $0.95
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V 100 V
Continuous Drain Current (ID) 50 A (Tc) —
Pulsed Drain Current (IDM) 200 A —
On-Resistance (RDS(on)) 9.6 mΩ max @ VGS=10V, ID=25A —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Power Dissipation (PD) 60 W (Tc) —
工作温度范围 -55°C to +175°C —
封装 PG-TDSON-8-33 (5x6 mm) PG-TDSON-8-34 (TDSON-8)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101 qualified
RoHS 状态 Compliant —
Lead-Free Yes Yes
MSL 等级 [DATA_NEEDED: MSL level] —
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 90 A
Maximum On-Resistance RDS(on) max at VGS=10V — 6.2 mOhm
Gate-Source Threshold Voltage VGS(th) typ — 3.8 V
Maximum Power Dissipation (Tc=25C) — 115 W
工作结温 — -55 C to +175 C
Technology — Trench MOSFET (OptiMOS 5, Generation 5)
Avalanche Rated — Yes (100% avalanche tested)
MSL (Moisture Sensitivity Level) — MSL1 (260 C peak reflow)
RoHS / Green Product — Yes (RoHS compliant, Green Product)

数据手册与资源

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