IAUC50N08S5L096ATMA1 vs IAUC90N10S5N062ATMA1 Comparison

Detailed side-by-side comparison of IAUC50N08S5L096ATMA1 by Infineon and IAUC90N10S5N062ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 ✓ Active

Specification Comparison

Parameter IAUC50N08S5L096ATMA1 IAUC90N10S5N062ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V 100 V
Continuous Drain Current (ID) 50 A (Tc) —
Pulsed Drain Current (IDM) 200 A —
On-Resistance (RDS(on)) 9.6 mΩ max @ VGS=10V, ID=25A —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Power Dissipation (PD) 60 W (Tc) —
Operating Temperature Range -55°C to +175°C —
Package PG-TDSON-8-33 (5x6 mm) PG-TDSON-8-34 (TDSON-8)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101 qualified
RoHS Status Compliant —
Lead-Free Yes Yes
MSL Level [DATA_NEEDED: MSL level] —
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 90 A
Maximum On-Resistance RDS(on) max at VGS=10V — 6.2 mOhm
Gate-Source Threshold Voltage VGS(th) typ — 3.8 V
Maximum Power Dissipation (Tc=25C) — 115 W
Operating Junction Temperature — -55 C to +175 C
Technology — Trench MOSFET (OptiMOS 5, Generation 5)
Avalanche Rated — Yes (100% avalanche tested)
MSL (Moisture Sensitivity Level) — MSL1 (260 C peak reflow)
RoHS / Green Product — Yes (RoHS compliant, Green Product)

Datasheets & Resources

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