IAUC50N08S5N102ATMA1 vs IPB60R280P7ATMA1 对比
详细并排对比 IAUC50N08S5N102ATMA1 出自 Infineon 和 IPB60R280P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUC50N08S5N102ATMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.51 | $0.88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC=25°C | 50 A | — |
| On-Resistance (RDS(on)) | 10.2 mΩ @ 25 A, 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Total Gate Charge (Qg) | 21 nC @ 10 V | — |
| Input Capacitance (Ciss) | 1394 pF @ 40 V | — |
| Power Dissipation (PD) at TC=25°C | 60 W | — |
| 工作温度范围 | -55°C to +175°C | -55 °C to +150 °C (T_j max) |
| 封装 / 外壳 | PG-TDSON-8-33 | — |
| 安装类型 | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| Product Family | — | CoolMOS P7 (600 V) |
| Technology | — | Superjunction (SJ) |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| 封装 | — | PG-TO263-3 (D2PAK) |
| 引脚数量 | — | 3 (2 + Tab) |
| Configuration | — | Single N-Channel |
| Lead-Free | — | Yes |
| Generation | — | 7th Gen CoolMOS (successor to P6) |