IAUC50N08S5N102ATMA1 - 80V 50A OptiMOS 5 N-MOSFET | Infineon
料号： IAUC50N08S5N102ATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.63 | $630.00 |
| 3,000 | $0.51 | $1,530.00 |
IAUC50N08S5N102ATMA1 概述
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently commutate current in switching power supplies, motor drives, and load-management circuits. Within the discrete-semiconductor taxonomy it sits as: MOSFET -> transistor -> discrete semiconductor. The "N-channel enhancement-mode" variant is the most common type for low-side and high-side switching because it is driven by a positive gate voltage and offers the lowest RDS(on) per unit silicon area. OptiMOS 5 is Infineon's fifth-generation 80 V platform, optimised for low conduction loss and fast switching in synchronous rectification and DC/DC conversion stages.
Key electrical characteristics include a drain-source voltage rating of 80 V, continuous drain current of 50 A at 25 °C case temperature, pulsed current capability typically in the 200 A range, gate threshold of ±20 V maximum, total gate charge of 21 nC at 10 V, and input capacitance of 1394 pF at 40 V. The 10.2 mΩ on-resistance minimises conduction loss, while the 21 nC Qg supports fast switching at frequencies from 100 kHz to 1 MHz.
The device uses Infineon's advanced OptiMOS 5 trench process, which reduces cell pitch and gate charge versus previous generations. The PG-TDSON-8-33 package features an exposed drain pad that delivers a junction-to-case thermal resistance (RthJC) suitable for high-current continuous operation on FR-4 PCB copper, with proper thermal via array beneath the drain tab.
Typical applications include automotive 48 V mild-hybrid DC/DC converters, electric power steering (EPS) motor drives, body-electronics load switches, battery-management protection FETs, and industrial synchronous-rectifier stages. AEC-Q101 qualification makes it directly suitable for under-the-hood automotive environments.
When designing with this part, observe the maximum junction temperature of 175 °C and ensure the PCB thermal via pattern under the drain pad is sized to keep Tj below 125 °C at worst-case continuous load. The ±20 V Vgs rating requires gate-drive design that limits transient overshoot, particularly in half-bridge topologies.
直接替换替代料： IAUC50N08S5N102ATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IAUC50N08S5N102ATMA1 （相同外形与封装尺寸） ——差异在于 Operating Temperature Range, Package, Technology, Drain-Source Voltage (VDS), Automotive Qualification.
快速对比工具——选择替代料号进行并排对比：
IAUCN08S7L033ATMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.86 / 个
查看数据手册 →IAUC60N04S6L030HATMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.94 / 个
查看数据手册 →IAUC120N04S6N010ATMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.68 / 个
查看数据手册 →IAUC120N06S5L015ATMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.92 / 个
查看数据手册 →BSC076N04NDATMA1
✅ 直接替换✓ 有现货
$0.82 / 个
查看数据手册 →IPC50N04S5L5R5ATMA1
✅ 直接替换✓ 有现货
$0.36 / 个
查看数据手册 →IPB60R280P7ATMA1
✅ 直接替换✓ 有现货
$0.88 / 个
查看数据手册 →IAUC50N08S5N102ATMA1 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| 晶体管类型 | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) at TC=25°C | 50 A |
| On-Resistance (RDS(on)) | 10.2 mΩ @ 25 A, 10 V |
| Gate-Source Voltage (VGS) Max | ±20 V |
| Total Gate Charge (Qg) | 21 nC @ 10 V |
| Input Capacitance (Ciss) | 1394 pF @ 40 V |
| Power Dissipation (PD) at TC=25°C | 60 W |
| 工作温度范围 | -55°C to +175°C |
| 封装 / 外壳 | PG-TDSON-8-33 |
| 安装类型 | Surface Mount |
| Qualification | AEC-Q101 |
| RoHS 状态 | Compliant |
IAUC50N08S5N102ATMA1 引脚配置
| 引脚 1 | Source — Source terminal (pin 1) |
| 引脚 2 | Source — Source terminal (pin 2) |
| 引脚 3 | Source — Source terminal (pin 3) |
| 引脚 4 | Gate — Gate drive input |
| 引脚 5 | Drain — Drain terminal (top side, internally connected to tab) |
| 引脚 6 | Drain — Drain terminal (top side, internally connected to tab) |
| 引脚 7 | Drain — Drain terminal (top side, internally connected to tab) |
| 引脚 8 | Drain — Drain terminal (top side, internally connected to tab) |
安全工作区 (DC)
典型应用
IAUC50N08S5N102ATMA1 适用于 6 应用s: 48V Mild-Hybrid DC/DC Converter, Electric Power Steering (EPS) Motor Drive, Automotive Body Electronics Load Switch, Battery Management Protection FET, Industrial Synchronous Rectifier Stage, Telecom 48V Hot-Swap Controller.
48V Mild-Hybrid DC/DC Converter
The IAUC50N08S5N102ATMA1's 80 V VDS rating provides 32 V of headroom above the 48 V automotive bus, while its 10.2 mΩ RDS(on) at 25 A minimises conduction loss in the synchronous-rectifier stage of 48-12 V buck converters. The 21 nC total gate charge supports switching frequencies of 100-300 kHz, enabling compact magnetics. AEC-Q101 qualification allows direct deployment under-the-hood without additional qualification cycles.
推荐
Electric Power Steering (EPS) Motor Drive
In EPS motor inverter stages the IAUC50N08S5N102ATMA1 serves as the low-side or high-side switching element in a three-phase bridge, where its 50 A continuous current rating covers peak torque demands up to 30-40 A per phase. The PG-TDSON-8-33 exposed drain pad provides the low thermal impedance required for sustained motor current. AEC-Q101 qualification and 175 °C maximum junction temperature support under-hood ambient conditions.
推荐
Automotive Body Electronics Load Switch
As a high-side or low-side load switch for body control modules, the IAUC50N08S5N102ATMA1 handles inrush currents from capacitive loads such as LED headlamps, HVAC blowers, and seat motors. Its 10.2 mΩ RDS(on) limits steady-state dissipation to roughly 5 W at 25 A, allowing PCB-only cooling. AEC-Q101 and ±20 V VGS rating ensure reliability across automotive temperature and load-dump transients.
推荐
Battery Management Protection FET
In 12 V and 48 V battery management systems the IAUC50N08S5N102ATMA1 functions as the pack-side or load-side protection MOSFET, interrupting current flow during over-current, short-circuit, or reverse-polarity events. The 80 V VDS rating covers transients on 48 V packs, while the 10.2 mΩ on-resistance minimises continuous power loss during normal operation. AEC-Q101 supports deployment in EV battery packs.
推荐
Industrial Synchronous Rectifier Stage
In industrial 24 V and 48 V buck or forward converters the IAUC50N08S5N102ATMA1 operates as the synchronous rectifier MOSFET, replacing Schottky diodes to achieve 2-5 percent efficiency gains. Its 80 V VDS rating supports 24 V bus rails with 100 percent transient margin, and the 21 nC Qg enables operation at 200-500 kHz switching frequencies. The PG-TDSON-8-33 package is suitable for forced-air or natural-convection cooling in industrial enclosures.
推荐
Telecom 48V Hot-Swap Controller
In -48 V telecom hot-swap applications the IAUC50N08S5N102ATMA1 acts as the inrush-limiting and disconnect FET on the negative rail of a 48 V bus. The 80 V VDS rating easily tolerates the 48 V nominal plus transients, and the 10.2 mΩ RDS(on) keeps voltage drop and heat dissipation manageable at 30-40 A continuous load. AEC-Q101 over-qualification ensures long-term reliability in always-on telecom equipment.
推荐
推荐产品汇总
工程参考数据： IAUC50N08S5N102ATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IAUCN08S7L033ATMA1 | IAUC60N04S6L030HATMA1 | IAUC120N04S6N010ATMA1 | BSC076N04NDATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-33 | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 40 V | 40 V | 40 V | 40 V |
| On-Resistance (RDS(on)) | 10.2 mΩ @ 25 A, 10 V | 3.3 mΩ | 3.0 mΩ | 1.0 mΩ | 7.6 mΩ | 5.5 mΩ |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
关键差异点
- 80 V VDS rating supports 48 V mild-hybrid automotive bus with 32 V headroom （对比 IAUC60N04S6L030HATMA1)
- AEC-Q101 qualified with full automotive reliability pedigree （对比 IPC50N04S5L5R5ATMA1)
- Balanced RDS(on) vs Qg trade-off at 10.2 mΩ / 21 nC （对比 IAUCN08S7L033ATMA1)
设计说明
Estimated: at continuous 25 A load with RDS(on) of 10.2 mΩ, conduction loss is approximately P = I² × RDS(on) = 625 × 0.0102 = 6.4 W. Using a standard 4-layer FR-4 PCB with a 1 oz copper drain pad and 25 thermal vias (0.3 mm drill, 1 mm pitch), the junction-to-ambient thermal resistance RthJA is approximately 50 C/W, resulting in a 95 C junction temperature rise above 25 C ambient. For sustained operation at 25 A continuous, ensure case temperature stays below 125 C by adding a thermal via array and copper pour area of at least 100 mm² beneath the exposed drain pad.
The PG-TDSON-8-33 package has the drain connection on the top exposed pad, which must be soldered to a copper land pattern with an array of thermal vias to the opposite PCB layer. Keep the gate-trace length below 5 mm to minimise parasitic inductance, which can cause gate-oscillation and false turn-on in half-bridge topologies. Place a 10 kΩ gate-source pull-down resistor close to the gate pin to ensure the MOSFET stays off during controller start-up.
Do not exceed the ±20 V VGS absolute maximum rating, even as a transient. In half-bridge applications the high-side MOSFET can experience VGS transients above 20 V due to source-inductance and dv/dt effects; add a gate-source clamping diode or TVS array if the gate-drive design produces overshoot. Also ensure that VDS transients during switching stay below 80 V by adding an RC snubber or TVS across the drain-source terminals if long wiring or inductive loads are present.
合规信息
AEC-Q101 qualified (note: AEC-Q101, not AEC-Q100 - these are different standards, with Q101 specific to discrete semiconductors). RoHS and halogen-free per Infineon product page. Not subject to REACH SVHC listing as of 2026-09-15.
