IAUC60N04S6L030HATMA1 vs IAUC41N06S5N102ATMA1 对比
详细并排对比 IAUC60N04S6L030HATMA1 出自 Infineon 和 IAUC41N06S5N102ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 ✓ 量产中规格对比
| 参数 | IAUC60N04S6L030HATMA1 | IAUC41N06S5N102ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.94 | $0.58 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 6 | — |
| Configuration | Half-Bridge (2 N-Channel) | — |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID) at TJ | 60 A | — |
| On-Resistance R_DS(on) at VGS=10V | 3.0 mOhm (typical) | — |
| Total Gate Charge (Qg) at VGS=10V | 35 nC | — |
| Output Capacitance (Coss) | 2.128 nF | — |
| Reverse Transfer Capacitance (Crss) | 596 pF | — |
| Gate Threshold Voltage (VGS(th)) | 2 V | — |
| Maximum Power Dissipation (PD) at TC | 75 W | — |
| 工作结温 | -55 C to +175 C | — |
| 封装 | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) | PG-TDSON-8-33 (SSO8) Surface Mount |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per part number suffix) | AEC-Q101 (per Infineon automotive MOSFET family) |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| Part Family | — | OptiMOS 5 Power-Transistor |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 47 A (Tj) |
| Power Dissipation (PD, Tc=25C) | — | 42 W |
| On-Resistance (RDS(on)) | — | 10.2 mΩ at VGS=10 V, ID=20 A |
| Gate-Source Threshold (VGS(th)) | — | 3.4 V (typical) |
| Total Gate Charge (QG) | — | 12.5 nC |
| 工作温度范围 | — | -55C to +175C (junction) |
| Channel Polarity | — | N-Channel (single) |