IAUCN04S7L005ATMA1 vs IAUCN04S7N019GATMA1 对比

详细并排对比 IAUCN04S7L005ATMA1 出自 Infineon 和 IAUCN04S7N019GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN04S7L005ATMA1 IAUCN04S7L005ATMA1 - 40V 430A 0.52mΩ OptiMOS 7 MOSFET | Infineon

IAUCN04S7L005ATMA1 - 40V 430A 0.52mΩ OptiMOS 7 MOSFET | Infineon

IAUCN04S7L005ATMA1 ✓ 量产中

规格对比

参数 IAUCN04S7L005ATMA1 IAUCN04S7N019GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.85 $0.82
Technology OptiMOS 7 (trench N-channel MOSFET) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, T_C=25°C) 430 A (Tj) —
Continuous Drain Current (I_D, T_C=100°C) [DATA_NEEDED: I_D at T_C=100°C] —
On-Resistance R_DS(on) max 0.52 mΩ —
Power Dissipation (P_D) 179 W (T_C) —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical and min/max] —
Total Gate Charge (Q_g) [DATA_NEEDED: total Q_g in nC] —
工作温度范围 -55°C to +175°C (Tj) [DATA_NEEDED: junction temperature range from datasheet]
封装 PG-TDSON-8-43 (TDSON-8) PG-THSOG-4-1 (SSO4G 5x6 mm)
安装类型 Surface Mount Surface Mount
引脚数量 8 —
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per family datasheet)
RoHS 状态 Compliant Compliant
Lead-Free Yes Yes
MSL 等级 [DATA_NEEDED: MSL rating] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Maximum Power Dissipation (Tc) — 81 W
Substrate Compatibility — IMS substrates and legacy PCB
Tape and Reel Packaging — Yes (per ATMA1 suffix)

数据手册与资源

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