IAUCN04S7L009ATMA1 vs IAUCN04S7N027GATMA1 对比
详细并排对比 IAUCN04S7L009ATMA1 出自 Infineon 和 IAUCN04S7N027GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUCN04S7L009ATMA1 - 40V 275A 0.91mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L009ATMA1 ✓ 量产中规格对比
| 参数 | IAUCN04S7L009ATMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.96 | $0.72 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUCN04S7L009ATMA1 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | OptiMOS™ 7 (trench-gate) | — |
| Drain-Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id, Tc=25°C) | 275 A (Tj) | — |
| Continuous Drain Current (Id, Tc=100°C) | 175 A | — |
| Power Dissipation (Pd, Tc=25°C) | 129 W | — |
| Rds(on) Max @ Vgs=10V | 0.91 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | [DATA_NEEDED: Vgs(th)] |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| 封装 | PG-TDSON-8-34 (TDSON EP) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 °C to +175 °C (Tj) | [DATA_NEEDED: operating temperature range] |
| Automotive Qualification | AEC-Q101 qualified | — |
| MSL 等级 | 1 | [DATA_NEEDED: MSL] |
| RoHS 状态 | Compliant | Compliant |
| Product Family | — | OptiMOS 7 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (Vds max) | — | 40 V |
| Continuous Drain Current (Id) | — | 117 A |
| On-Resistance (Rds(on) max) | — | 2.67 mOhm |
| Power Dissipation (Pd) | — | 70 W (Tc) |
| 封装 / 外壳 | — | PG-THSOG-4-1 (SSO4G 5x6) |
| Qualification | — | Automotive |
| Gate-Source Voltage Max (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Substrate Compatibility | — | IMS substrates and legacy FR-4 |