IAUCN04S7L009ATMA1 vs IAUCN04S7N027GATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7L009ATMA1 by Infineon and IAUCN04S7N027GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N027GATMA1 IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6

IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6

IAUCN04S7N027GATMA1 ✓ Active

Specification Comparison

Parameter IAUCN04S7L009ATMA1 IAUCN04S7N027GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUCN04S7L009ATMA1 —
Transistor Type N-Channel MOSFET —
Technology OptiMOS™ 7 (trench-gate) —
Drain-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id, Tc=25°C) 275 A (Tj) —
Continuous Drain Current (Id, Tc=100°C) 175 A —
Power Dissipation (Pd, Tc=25°C) 129 W —
Rds(on) Max @ Vgs=10V 0.91 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] [DATA_NEEDED: Vgs(th)]
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Package PG-TDSON-8-34 (TDSON EP) —
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 °C to +175 °C (Tj) [DATA_NEEDED: operating temperature range]
Automotive Qualification AEC-Q101 qualified —
MSL Level 1 [DATA_NEEDED: MSL]
RoHS Status Compliant Compliant
Product Family — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (Vds max) — 40 V
Continuous Drain Current (Id) — 117 A
On-Resistance (Rds(on) max) — 2.67 mOhm
Power Dissipation (Pd) — 70 W (Tc)
Package / Case — PG-THSOG-4-1 (SSO4G 5x6)
Qualification — Automotive
Gate-Source Voltage Max (Vgs) — [DATA_NEEDED: Vgs max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Substrate Compatibility — IMS substrates and legacy FR-4

Datasheets & Resources

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