IAUCN04S7L042GATMA1 vs IAUCN04S7L028ATMA1 对比

详细并排对比 IAUCN04S7L042GATMA1 出自 Infineon 和 IAUCN04S7L028ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN04S7L028ATMA1 IAUCN04S7L028ATMA1 - 40V 100A OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L028ATMA1 - 40V 100A OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L028ATMA1 ✓ 量产中

规格对比

参数 IAUCN04S7L042GATMA1 IAUCN04S7L028ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.86 $0.88
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 40V —
Technology Trench N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tj) 77 A —
Maximum Power Dissipation (PD, Tc) 50 W —
封装 PG-THSOG-4 (SSO4G 5x6) leaded surface mount PG-TDSON-8-33 (TDSON-8 EP)
安装类型 Surface Mount (IMS substrate / FR4 with thermal vias) Surface Mount
工作温度范围 -55C to +175C (Tj) —
Polarity / Channel Type N-Channel enhancement mode —
Automotive Qualified Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) —
RoHS 状态 Compliant Compliant
MSL 等级 1 —
Packing Tape & Reel (per -ATMA1 suffix) —
Target Substrate IMS substrate and legacy FR4 designs —
On-State Resistance RDS(on) [DATA_NEEDED: RDS(on) max @ VGS=10V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg @ VGS=10V] —
Series — OptiMOS 7
晶体管类型 — N-Channel MOSFET
Continuous Drain Current (ID) — 100 A
On-State Resistance (RDS(on)) max — 2.80 mOhm at VGS=10 V
On-State Resistance (RDS(on)) — 2.82 mOhm at VGS=10 V (JLCPCB reported)
Gate-Source Threshold (VGS(th)) — 1.8 V (typ)
Gate Charge (Qg) — 24 nC at VGS=10 V
Input Capacitance (Ciss) — 1.578 nF
Output Capacitance (Coss) — 788 pF
Reverse Transfer Capacitance (Crss) — 36 pF
功耗(Ptot) — 58 W
工作结温 — -55 C to +175 C
Automotive Qualification — AEC-Q101

数据手册与资源

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