IAUCN04S7N012ATMA1 vs BSC117N08NS5ATMA1 对比
详细并排对比 IAUCN04S7N012ATMA1 出自 Infineon 和 BSC117N08NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUCN04S7N012ATMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.18 | $0.46 |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS-7 (trench) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| On-State Resistance RDS(on) max at VGS=10V | 1.2 mΩ | — |
| On-State Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg value] |
| 工作温度范围 | -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] | -55 C to +150 C (typical MOSFET junction) |
| 封装 | PG-TDSON-8-34 (8-PowerTDFN) | PG-TDSON-8-7 (SuperSO8 5x6) |
| 安装类型 | Surface Mount | Surface Mount |
| Transistor Grade | Automotive (AEC-Q101) | — |
| 功耗（Ptot） | [DATA_NEEDED: Ptot at TC=25°C] | — |
| Thermal Resistance RθJA | [DATA_NEEDED: RθJA on JEDEC PCB] | — |
| RoHS 状态 | Compliant | Compliant |
| 无卤 | Yes | — |
| MSL 等级 | 1 | 1 |
| Polarity | N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC117N08NS5ATMA1 |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) max | — | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | — | 11.7 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 50 W |
| 引脚数量 | — | 8 |
| Lead-Free | — | Yes |