IAUCN04S7N012ATMA1 vs BSC117N08NS5ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N012ATMA1 by Infineon and BSC117N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC117N08NS5ATMA1
BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon
BSC117N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N012ATMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $0.46 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS-7 (trench) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 120 A | β |
| On-State Resistance RDS(on) max at VGS=10V | 1.2 mΞ© | β |
| On-State Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute max] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg value] |
| Operating Temperature Range | -55 Β°C to +175 Β°C [DATA_NEEDED: junction temperature max from datasheet] | -55 C to +150 C (typical MOSFET junction) |
| Package | PG-TDSON-8-34 (8-PowerTDFN) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Transistor Grade | Automotive (AEC-Q101) | β |
| Power Dissipation (Ptot) | [DATA_NEEDED: Ptot at TC=25Β°C] | β |
| Thermal Resistance RΞΈJA | [DATA_NEEDED: RΞΈJA on JEDEC PCB] | β |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| MSL Level | 1 | 1 |
| Polarity | N-Channel | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC117N08NS5ATMA1 |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Continuous Drain Current (ID) max | β | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | β | 11.7 mOhm |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 50 W |
| Pin Count | β | 8 |
| Lead-Free | β | Yes |