IAUCN04S7N019GATMA1 vs IAUCN04S7N015GATMA1 对比

详细并排对比 IAUCN04S7N019GATMA1 出自 Infineon 和 IAUCN04S7N015GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN04S7N015GATMA1 IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 ✓ 量产中

规格对比

参数 IAUCN04S7N019GATMA1 IAUCN04S7N015GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $2.21
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 OptiMOS 7
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tj) 147 A —
On-Resistance RDS(on) typical 1.95 mOhm —
Maximum Power Dissipation (Tc) 81 W —
封装 PG-THSOG-4-1 (SSO4G 5x6 mm) PG-THSOG-4-1 (SSO4G 5x6) surface mount
安装类型 Surface Mount Surface Mount (IMS-compatible source-down)
Substrate Compatibility IMS substrates and legacy PCB —
Automotive Qualification AEC-Q101 (per family datasheet) AEC-Q101 qualified
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Tape and Reel Packaging Yes (per ATMA1 suffix) —
工作温度范围 [DATA_NEEDED: junction temperature range from datasheet] —
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) — 165 A (Tc)
Power Dissipation (P_D) — 96 W (Tc)
R_DS(on) max — 1.53 mΩ at V_GS=10 V
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
工作结温 — -55C to +175C
Total Gate Charge (Q_G) — [DATA_NEEDED: total gate charge]
MSL 等级 — 1 (per JEDEC J-STD-020)

数据手册与资源

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