IAUCN04S7N056DATMA1 vs IAUCN04S7N019GATMA1 对比

详细并排对比 IAUCN04S7N056DATMA1 出自 Infineon 和 IAUCN04S7N019GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN04S7N056DATMA1 IAUCN04S7N056DATMA1 - 40V N-Channel MOSFET 5.6mΩ | Infineon

IAUCN04S7N056DATMA1 - 40V N-Channel MOSFET 5.6mΩ | Infineon

IAUCN04S7N056DATMA1 ✓ 量产中

规格对比

参数 IAUCN04S7N056DATMA1 IAUCN04S7N019GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.68 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUCN04S7N056DATMA1 —
Series OptiMOS 5 40V —
晶体管类型 N-Channel MOSFET N-Channel MOSFET
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) 60 A (Tj) —
RDS(on) (typ) 5.59 mΩ —
Power Dissipation (Pd) 41 W (Tc) —
工作温度范围 -55°C to +175°C [DATA_NEEDED: junction temperature range from datasheet]
封装 PG-TDSON-8-61 (TDSON EP, 5x6 mm) PG-THSOG-4-1 (SSO4G 5x6 mm)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101 (per family datasheet)
Technology OptiMOS 5 trench MOSFET —
RoHS 状态 Compliant Compliant
Packaging Type Tape & Reel —
Product Family — OptiMOS 7
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Maximum Power Dissipation (Tc) — 81 W
Substrate Compatibility — IMS substrates and legacy PCB
Lead-Free — Yes
Tape and Reel Packaging — Yes (per ATMA1 suffix)

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