IAUCN10S5L110TATMA1 vs IAUCN10S5L280DATMA1 对比

详细并排对比 IAUCN10S5L110TATMA1 出自 Infineon 和 IAUCN10S5L280DATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN10S5L110TATMA1 IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon

IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon

IAUCN10S5L110TATMA1 ✓ 量产中
Infineon
IAUCN10S5L280DATMA1 IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 ✓ 量产中

规格对比

参数 IAUCN10S5L110TATMA1 IAUCN10S5L280DATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.08 $1.62
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Technology N-Channel MOSFET, Trench, Logic Level OptiMOS 5 Trench MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tj 61 A —
On-Resistance RDS(on) max at VGS=10V 11.3 mΩ —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage rating] —
Power Dissipation (PD) at Tc 88 W —
工作结温 -55 °C to +175 °C —
Storage Temperature [DATA_NEEDED: storage temperature] —
封装 PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled PG-TDSON-8-61 (SSO8)
安装类型 Surface Mount Surface Mount
MSL 等级 MSL1 (260°C peak reflow) 1
Avalanche Rated 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Extended Qualification —
RoHS 状态 Compliant Compliant
Product Family — OptiMOS 5
Configuration — Dual N-Channel MOSFET Array
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) at Tj — 23 A
Power Dissipation (Pd) at Tc — 38 W
Automotive Qualified — Yes (AEC-Q101, IAU prefix)
工作温度范围 — -55C to +175C (junction)
引脚数量 — 8
Packing — Tape & Reel (T&R)

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