IAUCN10S5L280DATMA1 vs IAUCN10S7L180ATMA1 对比
详细并排对比 IAUCN10S5L280DATMA1 出自 Infineon 和 IAUCN10S7L180ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUCN10S5L280DATMA1 | IAUCN10S7L180ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.62 | $0.58 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Configuration | Dual N-Channel MOSFET Array | Single Quad Drain Triple Source |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) at Tj | 23 A | — |
| Power Dissipation (Pd) at Tc | 38 W | — |
| 封装 | PG-TDSON-8-61 (SSO8) | PG-TDSON-8-34 (Surface Mount) |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualified | Yes (AEC-Q101, IAU prefix) | Yes |
| Technology | OptiMOS 5 Trench MOSFET | — |
| 工作温度范围 | -55C to +175C (junction) | — |
| 引脚数量 | 8 | — |
| MSL 等级 | 1 | — |
| RoHS 状态 | Compliant | EU RoHS Compliant with Exemption |
| Packing | Tape & Reel (T&R) | — |
| Series | — | OptiMOS™ 7 |
| 晶体管类型 | — | N-Channel MOSFET |
| Number of Channels | — | 1 |
| Maximum Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tj) | — | 39 A |
| Power Dissipation (PD, Tc=25°C) | — | 58 W |
| Drain-Source On-Resistance (RDS(on)) | — | 16.1 mΩ @ VGS=10 V |
| Typical RDS(on) | — | 18 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.6 V |
| Maximum Gate-Source Voltage (VGS) | — | ±20 V (±16 V per JLCPCB listing) |
| Total Gate Charge (Qg) | — | 11 nC |
| Input Capacitance (Ciss) | — | 272 pF |
| Output Capacitance (Coss) | — | 668 pF |
| Reverse Transfer Capacitance (Crss) | — | 7 pF |
| 工作结温 | — | -55 °C to +175 °C |
| Channel Mode | — | Enhancement |
| Part Status | — | Active |