IAUT300N08S5N012ATMA2 vs IPG20N06S4L14AATMA1 对比
详细并排对比 IAUT300N08S5N012ATMA2 出自 Infineon 和 IPG20N06S4L14AATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUT300N08S5N012ATMA2 | IPG20N06S4L14AATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.20 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™-5 80 V | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 80 V | 60 V |
| Continuous Drain Current (ID, Tc=25°C) | 300 A | — |
| Pulsed Drain Current (IDM) | 1200 A (per datasheet, typical) | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.2 mΩ | — |
| Maximum Power Dissipation (PD, Tc) | 375 W | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| 工作温度范围 | -55 °C to +175 °C (TJ) | -55°C to +175°C (junction) |
| 封装 | PG-HSOF-8-1 (8-pin HSOF with drain tab) | PG-TDSON-8-10 (Wettable Flank) |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Compliant | Green Product (RoHS compliant) |
| MSL 等级 | [DATA_NEEDED: MSL level] | — |
| Part Number | — | IPG20N06S4L14AATMA1 |
| FET Type | — | 2 N-Channel (Dual) |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Power Dissipation (PD) | — | 50 W |
| RDS(on) at VGS=10V | — | 13.7 mΩ typical |
| RDS(on) at VGS=4.5V | — | 14 mΩ typical |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th)] |
| Logic-Level Gate Drive | — | Yes |
| Peak Reflow Temperature | — | 260°C |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (Wettable Flank) |
| Technology | — | OptiMOS™ Trench |