IAUT300N08S5N012ATMA2 vs IPG20N06S4L14AATMA1 Comparison
Detailed side-by-side comparison of IAUT300N08S5N012ATMA2 by Infineon and IPG20N06S4L14AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 ✓ ActiveSpecification Comparison
| Parameter | IAUT300N08S5N012ATMA2 | IPG20N06S4L14AATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™-5 80 V | — |
| Transistor Type | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 80 V | 60 V |
| Continuous Drain Current (ID, Tc=25°C) | 300 A | — |
| Pulsed Drain Current (IDM) | 1200 A (per datasheet, typical) | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.2 mΩ | — |
| Maximum Power Dissipation (PD, Tc) | 375 W | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Operating Temperature Range | -55 °C to +175 °C (TJ) | -55°C to +175°C (junction) |
| Package | PG-HSOF-8-1 (8-pin HSOF with drain tab) | PG-TDSON-8-10 (Wettable Flank) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Compliant | Green Product (RoHS compliant) |
| MSL Level | [DATA_NEEDED: MSL level] | — |
| Part Number | — | IPG20N06S4L14AATMA1 |
| FET Type | — | 2 N-Channel (Dual) |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Power Dissipation (PD) | — | 50 W |
| RDS(on) at VGS=10V | — | 13.7 mΩ typical |
| RDS(on) at VGS=4.5V | — | 14 mΩ typical |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th)] |
| Logic-Level Gate Drive | — | Yes |
| Peak Reflow Temperature | — | 260°C |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (Wettable Flank) |
| Technology | — | OptiMOS™ Trench |