IAUTN04S7N004ATMA1 vs IAUC60N04S6L030HATMA1 对比

详细并排对比 IAUTN04S7N004ATMA1 出自 Infineon 和 IAUC60N04S6L030HATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUTN04S7N004ATMA1 IAUTN04S7N004ATMA1 - 40V 0.38mΩ 350A OptiMOS 7 | Infineon

IAUTN04S7N004ATMA1 - 40V 0.38mΩ 350A OptiMOS 7 | Infineon

IAUTN04S7N004ATMA1 ✓ 量产中
Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ 量产中

规格对比

参数 IAUTN04S7N004ATMA1 IAUC60N04S6L030HATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.05 $0.94
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Technology N-Channel Trench MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TC=25C [DATA_NEEDED: ID at TC=25C] —
Continuous Drain Current (ID) at Tj 350 A —
On-Resistance RDS(on) max 0.38 mΩ —
Power Dissipation (PD) at TC 255 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 2 V
Gate Charge (Qg) [DATA_NEEDED: Qg total] —
工作温度范围 -55C to +175C —
封装 PG-HSOF-8-8 (TOLL 10x12) PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
安装类型 Surface Mount Surface Mount
Qualification AEC-Q101 Automotive —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Polarity N-Channel —
Part Series — OptiMOS 6
Configuration — Half-Bridge (2 N-Channel)
Continuous Drain Current (ID) at TJ — 60 A
On-Resistance R_DS(on) at VGS=10V — 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V — 35 nC
Output Capacitance (Coss) — 2.128 nF
Reverse Transfer Capacitance (Crss) — 596 pF
Maximum Power Dissipation (PD) at TC — 75 W
工作结温 — -55 C to +175 C
Automotive Qualification — AEC-Q101 (per part number suffix)
MSL 等级 — 1 (per JEDEC J-STD-020)

数据手册与资源

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