IAUTN04S7N005ATMA1 vs IAUC120N04S6N010ATMA1 对比
详细并排对比 IAUTN04S7N005ATMA1 出自 Infineon 和 IAUC120N04S6N010ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUTN04S7N005ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.22 | $0.68 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS™7 (40 V, Automotive) | — |
| Technology | N-Channel Trench MOSFET | OptiMOS 6 |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 350 A | — |
| On-State Resistance RDS(on) max @ VGS=10V | 0.44 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| 功耗（TC=25°C） | 218 W | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | PG-HSOF-8-8 (TOLL) 10 × 12 mm | PG-TDSON-8-34 (5x6 mm leadless) |
| 安装类型 | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes (per manufacturer datasheet) | — |
| MSL 等级 | [DATA_NEEDED: MSL level per JEDEC J-STD-020] | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Gate Charge (Qg typ.) | [DATA_NEEDED: Qg at VGS=10V] | — |
| Total Gate Charge Figure of Merit (FOM) | [DATA_NEEDED: FOM = RDS(on) × Qg] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| 工作温度范围 | — | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |
| Polarity | — | Single N-channel |