IAUTN04S7N005ATMA1 vs IAUC120N04S6N010ATMA1 Comparison

Detailed side-by-side comparison of IAUTN04S7N005ATMA1 by Infineon and IAUC120N04S6N010ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 ✓ Active

Specification Comparison

Parameter IAUTN04S7N005ATMA1 IAUC120N04S6N010ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Family OptiMOS™7 (40 V, Automotive) —
Technology N-Channel Trench MOSFET OptiMOS 6
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25°C) 350 A —
On-State Resistance RDS(on) max @ VGS=10V 0.44 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Power Dissipation (TC=25°C) 218 W —
Operating Junction Temperature -55 °C to +175 °C —
Package PG-HSOF-8-8 (TOLL) 10 × 12 mm PG-TDSON-8-34 (5x6 mm leadless)
Mounting Type Surface Mount Surface Mount
Configuration Single N-Channel —
Automotive Qualification AEC-Q101 AEC-Q101
RoHS Status Compliant Compliant
Lead-Free / Halogen-Free Yes (per manufacturer datasheet) —
MSL Level [DATA_NEEDED: MSL level per JEDEC J-STD-020] 1 (per JEDEC J-STD-020, per Infineon TDSON family)
Gate Charge (Qg typ.) [DATA_NEEDED: Qg at VGS=10V] —
Total Gate Charge Figure of Merit (FOM) [DATA_NEEDED: FOM = RDS(on) × Qg] —
FET Type — N-Channel
Drain-Source Voltage (V(BR)DSS) — 40 V
Continuous Drain Current (Id, Tc) — 150 A
Power Dissipation (Pd, Tc) — 150 W
RDS(on) at VGS=10V (typ) — 1.0 mΩ
RDS(on) at VGS=10V (max per LCSC excerpt) — 1.03 mΩ
Gate-Source Threshold (VGS(th), typ) — 3 V (at 90 µA)
Operating Temperature Range — -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family)
Gate Drive Recommendation — 10 V VGS for full RDS(on) spec
Polarity — Single N-channel

Datasheets & Resources

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