IAUZ30N08S5N186ATMA1 vs IAUCN08S7N024ATMA1 对比

详细并排对比 IAUZ30N08S5N186ATMA1 出自 Infineon 和 IAUCN08S7N024ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUZ30N08S5N186ATMA1 IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ30N08S5N186ATMA1 ✓ 量产中
Infineon
IAUCN08S7N024ATMA1 IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN08S7N024ATMA1 ✓ 量产中

规格对比

参数 IAUZ30N08S5N186ATMA1 IAUCN08S7N024ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.48 $0.89
Technology OptiMOS 5 N-Channel Power MOSFET (trench) OptiMOS 7 trench
Drain-Source Voltage (VDS) 80 V 80 V
Continuous Drain Current (ID, Tj) 30 A —
Power Dissipation (PD, Tc) 41 W —
On-State Resistance (RDS(on)) 18.6 mΩ (typical, VGS = 10 V) —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) [DATA_NEEDED: Qg at VGS=10V] —
工作温度范围 -55 °C to +175 °C (automotive) -55C to +175C (typical automotive)
封装 PG-TSDSON-8-32 (5x6 mm) PG-TDSON-8-34 (8-pin, exposed pad)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
RoHS 状态 Compliant —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen-free status] —
Manufacturer — Infineon Technologies
Series — Automotive OptiMOS 7 (80 V)
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25C — 165 A
Drain-Source On-Resistance (RDS(on)) max — 2.4 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
功耗(Ptot) — [DATA_NEEDED: Ptot @ TC=25C]
RoHS Compliance — Compliant
Typical Application — 48 V automotive DC-DC, motor drive, load switch

数据手册与资源

浏览全部产品 创建 BOM 获取报价