IAUZ40N08S5N100ATMA1 vs IAUZ20N08S5L300ATMA1 对比

详细并排对比 IAUZ40N08S5N100ATMA1 出自 Infineon 和 IAUZ20N08S5L300ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUZ40N08S5N100ATMA1 IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N08S5N100ATMA1 ✓ 量产中
Infineon
IAUZ20N08S5L300ATMA1 IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ20N08S5L300ATMA1 ✓ 量产中

规格对比

参数 IAUZ40N08S5N100ATMA1 IAUZ20N08S5L300ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.71 $0.81
Technology OptiMOS-5 N-Channel MOSFET Trench MOSFET (OptiMOS-5)
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc=25°C) 40 A —
Power Dissipation (PD, Tc=25°C) 68 W —
On-Resistance RDS(on) max 10 mΩ @ VGS=10 V, ID=20 A —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge Qg typ 24.2 nC @ VGS=10 V —
Input Capacitance Ciss 1591 pF @ VDS=40 V —
Gate-Source Voltage VGS max ±20 V —
工作温度范围 -55 °C to +175 °C (TJ) —
封装 PG-TDSON-8 (S3O8) 3.3 × 3.3 mm PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL rating] —
Automotive Qualification AEC-Q101 qualified —
RoHS 状态 Compliant Compliant
Channel Type N-Channel —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-5
Polarity — N-Channel
Drain-Source Voltage (Vds) — 80 V
Continuous Drain Current (Id) — 20 A (Tc)
Power Dissipation (Pd) — 30 W (Tc)
On-State Resistance (Rds(on)) — 30 mΩ @ 10 A, 10 V
Gate Threshold Voltage (Vgs(th)) — ±20 V (max Vgs rating)
Input Capacitance (Ciss) — 599 pF @ 40 V
Total Gate Charge (Qg) — 10.5 nC @ 10 V
工作结温 — -55°C to +175°C
Qualification — AEC-Q101 (automotive)

数据手册与资源

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