IPA60R180P7SXKSA1 vs IPW60R180P7XKSA1 对比
详细并排对比 IPA60R180P7SXKSA1 出自 Infineon 和 IPW60R180P7XKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPA60R180P7SXKSA1 | IPW60R180P7XKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.74 | $1.60 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-channel MOSFET | CoolMOS P7 (Superjunction, 7th generation) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Static Drain-Source On-Resistance (RDS(on)) | 180 mOhm (max at 25C) | — |
| Power Dissipation (PD) at Tc | 26 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| 封装 | PG-TO220-3-312 (Through-Hole, 3 leads) | PG-TO247-3 (TO-247-3, through-hole, 3+tab pins) |
| 安装类型 | Through Hole | Through Hole |
| 工作温度范围 | -55C to +150C (junction) | — |
| Channel Type | N-Channel | — |
| Configuration | Single | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 18 A |
| On-Resistance RDS(on) max | — | 180 mOhm |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (Pd, Tc=25C) | — | 72 W |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.5 V |
| Gate Drive Voltage (VGS, recommended) | — | 10 V (typical), +/-20 V max |
| 工作结温 | — | -55C to +150C |
| Body Diode | — | Fast body diode with low reverse recovery (Qrr) |
| Integrated Gate Resistor | — | Yes |
| Orderable Part Number | — | IPW60R180P7XKSA1 (tube pack, industrial grade) |