IPB017N10N5LFATMA1 vs BSC027N04LSGATMA1 对比
详细并排对比 IPB017N10N5LFATMA1 出自 Infineon 和 BSC027N04LSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB017N10N5LFATMA1 | BSC027N04LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.05 | $0.54 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 Linear FET | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide Semiconductor) | OptiMOS 3 (Trench) |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) @ TC=25C | 180 A | — |
| Continuous Drain Current (ID) @ TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) @ TC=25C | 313 W | — |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | 1.7 mΩ (max) | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| 工作温度范围 | -55C to +175C (junction) | -55°C to +150°C |
| 封装 / 外壳 | PG-TO263-7 (D2PAK-7), surface mount | — |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (unlimited) | 1 |
| Avalanche Rated | Yes | — |
| Linear-Mode (SOA) Optimized | Yes (OptiMOS Linear FET) | — |
| Product Family | — | OptiMOS 3 |
| 晶体管类型 | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 24 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 2.7 mΩ |
| Power Dissipation (Ta=25°C) | — | 2.5 W |
| 功耗（TC=25°C） | — | 83 W |
| 封装 | — | PG-TDSON-8-1 (SuperSO8 5x6) |
| 无卤 | — | Yes |