IPB031N08N5ATMA1 vs ISK057N04LM6ATLA1 对比

详细并排对比 IPB031N08N5ATMA1 出自 Infineon 和 ISK057N04LM6ATLA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
ISK057N04LM6ATLA1 ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon

ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon

ISK057N04LM6ATLA1 ✓ 量产中

规格对比

参数 IPB031N08N5ATMA1 ISK057N04LM6ATLA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.62 $0.52
Technology OptiMOS 5 (N-channel trench MOSFET) Trench (OptiMOS 6)
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) 120 A (Tc) —
Power Dissipation (PD) Max 167 W (Tc) —
On-Resistance (RDS(on)) Max 3.1 mOhm (VGS=10V) —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
工作温度范围 -55 C to +175 C -55 °C to +150 °C
封装 PG-TO263-3 (D2PAK) —
安装类型 Surface Mount Surface Mount
引脚数量 3 (Gate, Drain, Source + Tab) —
Tab Connection Drain (electrically connected to pin) —
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL rating] 1
Automotive Qualified Yes (per Arrow listing) —
Manufacturer — Infineon Technologies
Series — OptiMOS 6
晶体管类型 — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Tc — 64 A
Continuous Drain Current (ID) at Ta — [DATA_NEEDED: ID at TA=25C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max at VGS=10V — [DATA_NEEDED: RDS(on) max]
RDS(on) typical at VGS=10V — 5.7 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate Charge (Qg total) — [DATA_NEEDED: Qg total]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 39.1 W
封装 / 外壳 — PG-VSON-6-1 (PQFN 2x2)
Packaging — Tape & Reel (TR)
DigiKey Part Number — 448-ISK057N04LM6ATLA1TR-ND

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